Electroluminescence studies of modulation p-doped quantum dot laser structures

Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this red...

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Main Authors:	Hasbullah, Nurul Fadzlin, Hopkinson, Mark, Alexander, Ryan R., Hogg, Richard A., David, John P.R, Badcock, Tom J., Mowbray, David J.
Format:	Article
Language:	English
Published:	IEEE 2010
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/1/Electroluminescence_Studies_of_Modulation.pdf

id	iium-1478
recordtype	eprints
spelling	iium-14782012-01-26T05:34:03Z http://irep.iium.edu.my/1478/ Electroluminescence studies of modulation p-doped quantum dot laser structures Hasbullah, Nurul Fadzlin Hopkinson, Mark Alexander, Ryan R. Hogg, Richard A. David, John P.R Badcock, Tom J. Mowbray, David J. TK Electrical engineering. Electronics Nuclear engineering Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this reduction decreasing with increasing doping level. An increase in the activation energy controlling the EL quenching is found with increasing p-doping. This is attributed to an increased coulombic attraction between the extrinsic holes and injected electrons. At room temperature and low injection current, a superlinear dependence of the IEL on the injection current is observed. This superlinearity decreases as the p-doping increases and this behavior indicates a reduction in the amount of nonradiative recombination. This reduction is believed to be caused by the saturation of nonradiative centers and/or reduced escape of electrons to the GaAs barrier due to the increased confinement potential. IEEE 2010-12 Article PeerReviewed application/pdf en http://irep.iium.edu.my/1478/1/Electroluminescence_Studies_of_Modulation.pdf Hasbullah, Nurul Fadzlin and Hopkinson, Mark and Alexander, Ryan R. and Hogg, Richard A. and David, John P.R and Badcock, Tom J. and Mowbray, David J. (2010) Electroluminescence studies of modulation p-doped quantum dot laser structures. IEEE Journal of Quantum Electronics, 46 (12). pp. 1847-1853. ISSN 0018-9197 http://dx.doi.org/10.1109/JQE.2010.2049828 doi:10.1109/JQE.2010.2049828
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Hasbullah, Nurul Fadzlin Hopkinson, Mark Alexander, Ryan R. Hogg, Richard A. David, John P.R Badcock, Tom J. Mowbray, David J. Electroluminescence studies of modulation p-doped quantum dot laser structures
description	Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this reduction decreasing with increasing doping level. An increase in the activation energy controlling the EL quenching is found with increasing p-doping. This is attributed to an increased coulombic attraction between the extrinsic holes and injected electrons. At room temperature and low injection current, a superlinear dependence of the IEL on the injection current is observed. This superlinearity decreases as the p-doping increases and this behavior indicates a reduction in the amount of nonradiative recombination. This reduction is believed to be caused by the saturation of nonradiative centers and/or reduced escape of electrons to the GaAs barrier due to the increased confinement potential.
format	Article
author	Hasbullah, Nurul Fadzlin Hopkinson, Mark Alexander, Ryan R. Hogg, Richard A. David, John P.R Badcock, Tom J. Mowbray, David J.
author_facet	Hasbullah, Nurul Fadzlin Hopkinson, Mark Alexander, Ryan R. Hogg, Richard A. David, John P.R Badcock, Tom J. Mowbray, David J.
author_sort	Hasbullah, Nurul Fadzlin
title	Electroluminescence studies of modulation p-doped quantum dot laser structures
title_short	Electroluminescence studies of modulation p-doped quantum dot laser structures
title_full	Electroluminescence studies of modulation p-doped quantum dot laser structures
title_fullStr	Electroluminescence studies of modulation p-doped quantum dot laser structures
title_full_unstemmed	Electroluminescence studies of modulation p-doped quantum dot laser structures
title_sort	electroluminescence studies of modulation p-doped quantum dot laser structures
publisher	IEEE
publishDate	2010
url	http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/1/Electroluminescence_Studies_of_Modulation.pdf
first_indexed	2023-09-18T20:08:50Z
last_indexed	2023-09-18T20:08:50Z
_version_	1777407341076938752

Electroluminescence studies of modulation p-doped quantum dot laser structures

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