Sidewall surface roughness of Sputtered Silicon 1: surface modelling
Mathematical models for the calculation of sidewall surface roughness have been developed for focused ion beam (FIB) sputtering. The surface roughness profile at the sidewall was different to the bottom surface profile for the same sputtering parameters and substrate material. The cumulative sp...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Maney Publishing
2003
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/27107/ http://irep.iium.edu.my/27107/1/019_SE1_9%282%29_097-103.pdf |
| Summary: | Mathematical models for the calculation of sidewall
surface roughness have been developed for focused ion
beam (FIB) sputtering. The surface roughness profile
at the sidewall was different to the bottom surface
profile for the same sputtering parameters and substrate
material. The cumulative sputtering by the
Gaussian beam creates a steady state surface profile
at the sidewall which has been used to develop surface
roughness models. The ion intensity distribution profile
was considered to be Gaussian. The beam function
includes ion type, ion acceleration voltage, beam radius,
tailing and neighbouring of the successive beams.
Knowing the beam radius and pixel spacing, sidewall
surface roughness of FIB sputtered microfeatures can be
calculated using these models. The substrate material
function has no direct effect on the sidewall surface
profile if the same material is used for the study of beam
profile and fabrication of microfeatures. |
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