Surface integrity and removal rate of silicon sputtered with focused ion beam

Surface integrity and removal rate of silicon sputtered with focused ion beam

This paper investigates the micromachinability of (100) silicon by focused gallium ion beam sputtering at normal incident angle. Effect of the beam parameters (dose, aperture and accelerating voltage) and the beam scanning parameters (pixel spacing, dwell time, retracing time and scanning type) on t...

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Main Authors: Hung, NguyenPhu, Ali, Mohammad Yeakub, Fu, Yongqi, Ong, NanShing, Tay, MengLeong
Format: Article
Language:English
Published: Taylor and Francis Inc. 2001
Subjects:
TS Manufactures
Online Access:http://irep.iium.edu.my/27113/
http://irep.iium.edu.my/27113/
http://irep.iium.edu.my/27113/
http://irep.iium.edu.my/27113/1/025_MST_2001_5%282%29_239-254.pdf
id iium-27113
recordtype eprints
spelling iium-271132013-07-23T07:51:09Z http://irep.iium.edu.my/27113/ Surface integrity and removal rate of silicon sputtered with focused ion beam Hung, NguyenPhu Ali, Mohammad Yeakub Fu, Yongqi Ong, NanShing Tay, MengLeong TS Manufactures This paper investigates the micromachinability of (100) silicon by focused gallium ion beam sputtering at normal incident angle. Effect of the beam parameters (dose, aperture and accelerating voltage) and the beam scanning parameters (pixel spacing, dwell time, retracing time and scanning type) on the surface integrity and material removal rate were studied. Statistical models derived from factorial experiments were used to predict the sputtered depths and material removal rates of silicon. The sputtering depth increased with higher accelerating voltage, more ion dose, shorter pixel spacing, and longer dwell time. Similar trends were found for predicting the material removal rate. A surface roughness in the range 2-5 nm was achieved, and was found to be linearly dependent on the pixel spacing. Taylor and Francis Inc. 2001 Article PeerReviewed application/pdf en http://irep.iium.edu.my/27113/1/025_MST_2001_5%282%29_239-254.pdf Hung, NguyenPhu and Ali, Mohammad Yeakub and Fu, Yongqi and Ong, NanShing and Tay, MengLeong (2001) Surface integrity and removal rate of silicon sputtered with focused ion beam. Machining Science and Technology, 5 (2). pp. 239-254. ISSN 1091-0344 http://www.tandfonline.com/doi/full/10.1081/MST-100107845#.Ue42cNJHIrU 10.1081/MST-100107845
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
topic TS Manufactures
spellingShingle TS Manufactures
Hung, NguyenPhu
Ali, Mohammad Yeakub
Fu, Yongqi
Ong, NanShing
Tay, MengLeong
Surface integrity and removal rate of silicon sputtered with focused ion beam
description This paper investigates the micromachinability of (100) silicon by focused gallium ion beam sputtering at normal incident angle. Effect of the beam parameters (dose, aperture and accelerating voltage) and the beam scanning parameters (pixel spacing, dwell time, retracing time and scanning type) on the surface integrity and material removal rate were studied. Statistical models derived from factorial experiments were used to predict the sputtered depths and material removal rates of silicon. The sputtering depth increased with higher accelerating voltage, more ion dose, shorter pixel spacing, and longer dwell time. Similar trends were found for predicting the material removal rate. A surface roughness in the range 2-5 nm was achieved, and was found to be linearly dependent on the pixel spacing.
format Article
author Hung, NguyenPhu
Ali, Mohammad Yeakub
Fu, Yongqi
Ong, NanShing
Tay, MengLeong
author_facet Hung, NguyenPhu
Ali, Mohammad Yeakub
Fu, Yongqi
Ong, NanShing
Tay, MengLeong
author_sort Hung, NguyenPhu
title Surface integrity and removal rate of silicon sputtered with focused ion beam
title_short Surface integrity and removal rate of silicon sputtered with focused ion beam
title_full Surface integrity and removal rate of silicon sputtered with focused ion beam
title_fullStr Surface integrity and removal rate of silicon sputtered with focused ion beam
title_full_unstemmed Surface integrity and removal rate of silicon sputtered with focused ion beam
title_sort surface integrity and removal rate of silicon sputtered with focused ion beam
publisher Taylor and Francis Inc.
publishDate 2001
url http://irep.iium.edu.my/27113/
http://irep.iium.edu.my/27113/
http://irep.iium.edu.my/27113/
http://irep.iium.edu.my/27113/1/025_MST_2001_5%282%29_239-254.pdf
first_indexed 2023-09-18T20:40:19Z
last_indexed 2023-09-18T20:40:19Z
_version_ 1777409320986607616

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