Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering

AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent...

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Main Authors:	Bakri, Jufriadi, Sutjipto, Agus Geter Edy, Othman, Raihan, Muhida, Riza
Format:	Article
Language:	English
Published:	Trans Tech Publications, Switzerland 2011
Subjects:	TA401 Materials of engineering and construction TJ163.26 Energy conservation TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/2876/ http://irep.iium.edu.my/2876/ http://irep.iium.edu.my/2876/ http://irep.iium.edu.my/2876/1/AMR_264-265_2011_Jufri.pdf

id	iium-2876
recordtype	eprints
spelling	iium-28762012-05-07T13:40:38Z http://irep.iium.edu.my/2876/ Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering Bakri, Jufriadi Sutjipto, Agus Geter Edy Othman, Raihan Muhida, Riza TA401 Materials of engineering and construction TJ163.26 Energy conservation TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent contacts, static discharge dissipation. The production of useful and commercially attractive thin films using different deposition processes is very important parameter to investigate. A systematic study of the sputtering condition and their influenced on electrical and structural were studied. In this work, AZO films were deposited by RF magnetron sputtering at 200 °C. The result shows that the deposited time has influenced the characteristic of deposited AZO films. For a longer deposition time, thin film shows a uniform grain growth. The resistivity found minimum at the deposition time of 45 minutes. It can be considered that by reducing of the grain boundaries which enable the electron carries to conduct smoothly. Trans Tech Publications, Switzerland 2011-06-30 Article PeerReviewed application/pdf en cc_by_nc http://irep.iium.edu.my/2876/1/AMR_264-265_2011_Jufri.pdf Bakri, Jufriadi and Sutjipto, Agus Geter Edy and Othman, Raihan and Muhida, Riza (2011) Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering. Advanced Materials Research, 264-65. pp. 754-759. ISSN 1662-8985 http://www.scientific.net/AMR.264-265.754 doi:10.4028/www.scientific.net/AMR.264-265.754
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TA401 Materials of engineering and construction TJ163.26 Energy conservation TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TA401 Materials of engineering and construction TJ163.26 Energy conservation TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Bakri, Jufriadi Sutjipto, Agus Geter Edy Othman, Raihan Muhida, Riza Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering
description	AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent contacts, static discharge dissipation. The production of useful and commercially attractive thin films using different deposition processes is very important parameter to investigate. A systematic study of the sputtering condition and their influenced on electrical and structural were studied. In this work, AZO films were deposited by RF magnetron sputtering at 200 °C. The result shows that the deposited time has influenced the characteristic of deposited AZO films. For a longer deposition time, thin film shows a uniform grain growth. The resistivity found minimum at the deposition time of 45 minutes. It can be considered that by reducing of the grain boundaries which enable the electron carries to conduct smoothly.
format	Article
author	Bakri, Jufriadi Sutjipto, Agus Geter Edy Othman, Raihan Muhida, Riza
author_facet	Bakri, Jufriadi Sutjipto, Agus Geter Edy Othman, Raihan Muhida, Riza
author_sort	Bakri, Jufriadi
title	Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering
title_short	Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering
title_full	Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering
title_fullStr	Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering
title_full_unstemmed	Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering
title_sort	microstructure and electrical properties of azo films prepared by rf magnetron sputtering
publisher	Trans Tech Publications, Switzerland
publishDate	2011
url	http://irep.iium.edu.my/2876/ http://irep.iium.edu.my/2876/ http://irep.iium.edu.my/2876/ http://irep.iium.edu.my/2876/1/AMR_264-265_2011_Jufri.pdf
first_indexed	2023-09-18T20:10:33Z
last_indexed	2023-09-18T20:10:33Z
_version_	1777407448645107712

Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering

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