Electrical properties of neutron-irradiated silicon and GaAs commercial diodes

Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the device parameters after neutron exposure. Californium-252 source was used to irradiate these diodes up to total dose of 1117.87mSv. The effects of nuclear radiation on the forward and reverse current-vol...

Full description

Bibliographic Details
Main Authors:	Che Omar, Nuurul Iffah, Hasbullah, Nurul Fadzlin, Alang Md Rashid, Nahrul Khair, Abdullah , Jaafar
Format:	Conference or Workshop Item
Language:	English
Published:	2012
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/29528/ http://irep.iium.edu.my/29528/ http://irep.iium.edu.my/29528/1/electrical_properties.pdf

id	iium-29528
recordtype	eprints
spelling	iium-295282013-09-18T02:48:19Z http://irep.iium.edu.my/29528/ Electrical properties of neutron-irradiated silicon and GaAs commercial diodes Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Alang Md Rashid, Nahrul Khair Abdullah , Jaafar TK Electrical engineering. Electronics Nuclear engineering Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the device parameters after neutron exposure. Californium-252 source was used to irradiate these diodes up to total dose of 1117.87mSv. The effects of nuclear radiation on the forward and reverse current-voltage (I-V) characteristics of Silicon and GaAs diodes were studied at room temperature. It was found that the magnitudes of forward bias electrical characteristics were in most instances unaffected by irradiation in both materials. The increments in TSKS5400S GaAs infrared emitting diode reverse currents were large after irradiation. These changes were interpreted as effects of displacement damage generating generation-recombination currents due to defects created. However, reverse bias (RB) characteristics of 1N4148 silicon diodes showed decrement in dark current. This is attributed to the type of diodes used. 2012 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/29528/1/electrical_properties.pdf Che Omar, Nuurul Iffah and Hasbullah, Nurul Fadzlin and Alang Md Rashid, Nahrul Khair and Abdullah , Jaafar (2012) Electrical properties of neutron-irradiated silicon and GaAs commercial diodes. In: 2012 IEEE Symposium on Industrial Electronics & Applications (ISIEA), 23-26 Sept. 2012 , Bandung, Indonesia. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6496678&tag=1
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Alang Md Rashid, Nahrul Khair Abdullah , Jaafar Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
description	Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the device parameters after neutron exposure. Californium-252 source was used to irradiate these diodes up to total dose of 1117.87mSv. The effects of nuclear radiation on the forward and reverse current-voltage (I-V) characteristics of Silicon and GaAs diodes were studied at room temperature. It was found that the magnitudes of forward bias electrical characteristics were in most instances unaffected by irradiation in both materials. The increments in TSKS5400S GaAs infrared emitting diode reverse currents were large after irradiation. These changes were interpreted as effects of displacement damage generating generation-recombination currents due to defects created. However, reverse bias (RB) characteristics of 1N4148 silicon diodes showed decrement in dark current. This is attributed to the type of diodes used.
format	Conference or Workshop Item
author	Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Alang Md Rashid, Nahrul Khair Abdullah , Jaafar
author_facet	Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Alang Md Rashid, Nahrul Khair Abdullah , Jaafar
author_sort	Che Omar, Nuurul Iffah
title	Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
title_short	Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
title_full	Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
title_fullStr	Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
title_full_unstemmed	Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
title_sort	electrical properties of neutron-irradiated silicon and gaas commercial diodes
publishDate	2012
url	http://irep.iium.edu.my/29528/ http://irep.iium.edu.my/29528/ http://irep.iium.edu.my/29528/1/electrical_properties.pdf
first_indexed	2023-09-18T20:43:21Z
last_indexed	2023-09-18T20:43:21Z
_version_	1777409512180809728

Electrical properties of neutron-irradiated silicon and GaAs commercial diodes

Similar Items