Mohamed, M. A., Lam, P. T., & Otsuka, N. (2013). Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers. Elsevier.
Chicago Style (17th ed.) CitationMohamed, Mohd Ambri, Pham Tien Lam, and N. Otsuka. Origin of Cooperative Transition of Antisite-Arsenic Defects in Be-doped Low-temperature-grown GaAs Layers. Elsevier, 2013.
MLA (8th ed.) CitationMohamed, Mohd Ambri, et al. Origin of Cooperative Transition of Antisite-Arsenic Defects in Be-doped Low-temperature-grown GaAs Layers. Elsevier, 2013.
Warning: These citations may not always be 100% accurate.