Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to...
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Elsevier
2013
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| Online Access: | http://irep.iium.edu.my/29881/ http://irep.iium.edu.my/29881/ http://irep.iium.edu.my/29881/ http://irep.iium.edu.my/29881/1/journal_of_crystal_growth.pdf |
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iium-298812013-07-29T01:49:38Z http://irep.iium.edu.my/29881/ Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers Mohamed, Mohd Ambri Lam, Pham Tien Otsuka, N. QC Physics QD Chemistry TK7885 Computer engineering A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to a lattice strain which results in elastic interactions among AsGa defects. A change in magnetizations is induced by large lattice distortions during transition of AsGa defects from substitutional sites to interstitial sites. The calculation of electron states of an AsGa atom with a shallow acceptor Be atom show that at the transition, an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom, leading to a magnetization annihilation. Elsevier 2013-01-04 Article PeerReviewed application/pdf en http://irep.iium.edu.my/29881/1/journal_of_crystal_growth.pdf Mohamed, Mohd Ambri and Lam, Pham Tien and Otsuka, N. (2013) Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers. Journal of Crystal Growth, 378. pp. 329-332. ISSN 0022-0248 (In Press) http://dx.doi.org/10.1016/j.jcrysgro.2012.12.070 10.1016/j.jcrysgro.2012.12.070 |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
International Islamic University Malaysia |
| building |
IIUM Repository |
| collection |
Online Access |
| language |
English |
| topic |
QC Physics QD Chemistry TK7885 Computer engineering |
| spellingShingle |
QC Physics QD Chemistry TK7885 Computer engineering Mohamed, Mohd Ambri Lam, Pham Tien Otsuka, N. Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| description |
A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to a lattice strain which results in elastic interactions among AsGa defects. A change in magnetizations is induced by large lattice distortions during transition of AsGa defects from substitutional sites to interstitial sites. The calculation of electron states of an AsGa atom with a shallow acceptor Be atom show that at the transition, an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom, leading to a magnetization annihilation. |
| format |
Article |
| author |
Mohamed, Mohd Ambri Lam, Pham Tien Otsuka, N. |
| author_facet |
Mohamed, Mohd Ambri Lam, Pham Tien Otsuka, N. |
| author_sort |
Mohamed, Mohd Ambri |
| title |
Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_short |
Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_full |
Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_fullStr |
Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_full_unstemmed |
Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers |
| title_sort |
origin of cooperative transition of antisite-arsenic defects in be-doped low-temperature-grown gaas layers |
| publisher |
Elsevier |
| publishDate |
2013 |
| url |
http://irep.iium.edu.my/29881/ http://irep.iium.edu.my/29881/ http://irep.iium.edu.my/29881/ http://irep.iium.edu.my/29881/1/journal_of_crystal_growth.pdf |
| first_indexed |
2023-09-18T20:43:52Z |
| last_indexed |
2023-09-18T20:43:52Z |
| _version_ |
1777409544976072704 |