Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation

This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-volt...

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Main Authors:	Ahmad Fauzi, Dhiyauddin, Alang Md Rashid, Nahrul Khair, Abdul Karim, Julia, Mohamed Zin, Mohamed Rawi, Hasbullah, Nurul Fadzlin, Sheik Fareed, O A
Format:	Article
Language:	English
Published:	IOP Publishing 2013
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/1/electrical_performances.pdf

id	iium-33632
recordtype	eprints
spelling	iium-336322014-05-30T02:42:22Z http://irep.iium.edu.my/33632/ Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation Ahmad Fauzi, Dhiyauddin Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, Mohamed Rawi Hasbullah, Nurul Fadzlin Sheik Fareed, O A TK Electrical engineering. Electronics Nuclear engineering This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-voltage (C-V) measurements using Keithley 4200 SCS. Two different commercial optoelectronics diodes; GaN on SiC light emitting diode (LED) and GaAs infrared emitting diode (IRED) were radiated with neutron using pneumatic transfer system (PTS) in the PUSPATI TRIGA Mark II research reactor under total neutron flux of 1×1012 neutron/cm2.s. Following the neutron exposure for 1, 3 and 5 minutes, the I-V forward bias and reverse bias leakage current increase for GaAs IREDs, but minimal changes were observed in the GaN LEDs. The C-V measurements revealed that the capacitance and carrier concentration of GaAs IREDs decrease with increasing radiation flux. IOP Publishing 2013-12 Article PeerReviewed application/pdf en http://irep.iium.edu.my/33632/1/electrical_performances.pdf Ahmad Fauzi, Dhiyauddin and Alang Md Rashid, Nahrul Khair and Abdul Karim, Julia and Mohamed Zin, Mohamed Rawi and Hasbullah, Nurul Fadzlin and Sheik Fareed, O A (2013) Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation. IOP Conference Series: Materials Science and Engineering, 23. 012029(1)-012029(8). ISSN 1757-8981 http://iopscience.iop.org/1757-899X/53/1/012029 10.1088/1757-899X/53/1/012029
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Ahmad Fauzi, Dhiyauddin Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, Mohamed Rawi Hasbullah, Nurul Fadzlin Sheik Fareed, O A Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
description	This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-voltage (C-V) measurements using Keithley 4200 SCS. Two different commercial optoelectronics diodes; GaN on SiC light emitting diode (LED) and GaAs infrared emitting diode (IRED) were radiated with neutron using pneumatic transfer system (PTS) in the PUSPATI TRIGA Mark II research reactor under total neutron flux of 1×1012 neutron/cm2.s. Following the neutron exposure for 1, 3 and 5 minutes, the I-V forward bias and reverse bias leakage current increase for GaAs IREDs, but minimal changes were observed in the GaN LEDs. The C-V measurements revealed that the capacitance and carrier concentration of GaAs IREDs decrease with increasing radiation flux.
format	Article
author	Ahmad Fauzi, Dhiyauddin Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, Mohamed Rawi Hasbullah, Nurul Fadzlin Sheik Fareed, O A
author_facet	Ahmad Fauzi, Dhiyauddin Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, Mohamed Rawi Hasbullah, Nurul Fadzlin Sheik Fareed, O A
author_sort	Ahmad Fauzi, Dhiyauddin
title	Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
title_short	Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
title_full	Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
title_fullStr	Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
title_full_unstemmed	Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
title_sort	electrical performances of commercial gan and gaas based optoelectronics under neutron irradiation
publisher	IOP Publishing
publishDate	2013
url	http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/1/electrical_performances.pdf
first_indexed	2023-09-18T20:48:37Z
last_indexed	2023-09-18T20:48:37Z
_version_	1777409843143901184

Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation

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