Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation

Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radia tion with pneumatic transfer system of TRIGA Mark-II react...

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Main Authors:	Oo, Myo Min, Alang Md Rashid, Nahrul Khair, Abdul Karim, Julia, Mohamed Zin, muhammad Rawi, Ab. Rahim, Rosminazuin, Azman, Amelia Wong, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English
Published:	2014
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/4/electrical_characterization.pdf

id	iium-37047
recordtype	eprints
spelling	iium-370472015-07-26T16:18:38Z http://irep.iium.edu.my/37047/ Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, muhammad Rawi Ab. Rahim, Rosminazuin Azman, Amelia Wong Hasbullah, Nurul Fadzlin TK Electrical engineering. Electronics Nuclear engineering Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radia tion with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irra-diated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement dam age in the bulk layer of the transistor structure and gamma radia -tion can induce ionizing damage in the oxide layer of emit ter-base depletion layer. The cur rent gain degradation is believed to be governed by the in creasing re combination current in the base-emitter depletion region 2014 Article PeerReviewed application/pdf en http://irep.iium.edu.my/37047/4/electrical_characterization.pdf Oo, Myo Min and Alang Md Rashid, Nahrul Khair and Abdul Karim, Julia and Mohamed Zin, muhammad Rawi and Ab. Rahim, Rosminazuin and Azman, Amelia Wong and Hasbullah, Nurul Fadzlin (2014) Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation. Nuclear Technology and Radiation Protection, 29 (1). pp. 46-52. ISSN 1451-3994 http://dx.doi.org/10.2298/NTRP1401046O doi:10.2298/NTRP1401046O
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, muhammad Rawi Ab. Rahim, Rosminazuin Azman, Amelia Wong Hasbullah, Nurul Fadzlin Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation
description	Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radia tion with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irra-diated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement dam age in the bulk layer of the transistor structure and gamma radia -tion can induce ionizing damage in the oxide layer of emit ter-base depletion layer. The cur rent gain degradation is believed to be governed by the in creasing re combination current in the base-emitter depletion region
format	Article
author	Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, muhammad Rawi Ab. Rahim, Rosminazuin Azman, Amelia Wong Hasbullah, Nurul Fadzlin
author_facet	Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, muhammad Rawi Ab. Rahim, Rosminazuin Azman, Amelia Wong Hasbullah, Nurul Fadzlin
author_sort	Oo, Myo Min
title	Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation
title_short	Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation
title_full	Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation
title_fullStr	Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation
title_full_unstemmed	Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation
title_sort	electrical characterization of commercial npn bipolar junction transistors under neutron and gamma irradiation
publishDate	2014
url	http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/4/electrical_characterization.pdf
first_indexed	2023-09-18T20:53:08Z
last_indexed	2023-09-18T20:53:08Z
_version_	1777410127469477888

Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation

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