Geometrical characterization of single layer silicon based piezoresistive microcantilever using ANSYS
In this paper, characterization on the geometrical aspects of a single layer, p-doped silicon based piezoresistive microcantilever using finite element method is presented. The displacement and the von Mises stress obtained from the simulation were observed by varying the geometries of the micr...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/38793/ http://irep.iium.edu.my/38793/ http://irep.iium.edu.my/38793/1/IEEE_Published_ICSE_2012.pdf |
| Summary: | In this paper, characterization on the geometrical
aspects of a single layer, p-doped silicon based piezoresistive
microcantilever using finite element method is presented. The
displacement and the von Mises stress obtained from the
simulation were observed by varying the geometries of the
microcantilever namely the thickness, length, width and the
distance between the piezoresistor legs. The sensitivity of the
microcantilever was then calculated and tabulated. From the
simulation results, it can be shown that the displacement and
sensitivity of the single layer piezoresistive microcantilever is
comparable to the dual layer counterpart with the thinner
microcantilever resulted in a maximum displacement and
sensitivity, compared to other geometrical factors. |
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