Novel low-voltage RF-MEMS switch: design and simulation

This paper presents a novel design of a low-voltage radio frequency (RF) micro-electromechanical system (MEMS) switch with its electro-mechanical and microwave characteristics’ simulation, as well as its virtual fabrication process. The RF-MEMS switch employs a shunt capacitive structure. There are...

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Main Authors:	Ma, Li Ya, Soin, Norhayati, Nordin, Anis Nurashikin
Format:	Conference or Workshop Item
Language:	English English
Published:	Institute of Electrical and Electronics Engineers Inc. 2014
Subjects:	T Technology (General)
Online Access:	http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/1/39111_Novel%20low-voltage%20RF-MEMS%20switch.pdf http://irep.iium.edu.my/39111/2/39111_Novel%20low-voltage%20RF-MEMS%20switch_SCOPUS.pdf

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recordtype	eprints
spelling	iium-391112017-09-26T09:03:27Z http://irep.iium.edu.my/39111/ Novel low-voltage RF-MEMS switch: design and simulation Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin T Technology (General) This paper presents a novel design of a low-voltage radio frequency (RF) micro-electromechanical system (MEMS) switch with its electro-mechanical and microwave characteristics’ simulation, as well as its virtual fabrication process. The RF-MEMS switch employs a shunt capacitive structure. There are eight beams supporting a rectangular membrane to suspend over a coplanar waveguide (CPW) transmission line. The outer four crab-leg beams are used to bypass the signal line to the ground by the coupling capacitance and via when switch is actuated; and the inner four serpentine beams are used to supply the DC actuation voltage to the membrane. The developed RF-MEMS switch has a very low pull-in voltage of 3.53V; and the maximum von Mises stress under actuated condition is 13.1808MPa. The capacitance ratio of the switch is 218.5, with switch-on capacitance of 68fF. The switch’s microwave characteristics are obtained by AWR Design Environment 10® simulation; its insertion loss and isolation is -1.7532dB and -18.394dB respectively at 20GHz; and at frequency of 60GHz, the insertion loss is -7.2499dB and isolation is -27.293dB. A simple low-cost three-mask process with photoresist (PR-S1800) as sacrifice layer to release the membrane is proposed in this design; and a virtual fabricated device is simulated using IntelliFab v8.7® software. Institute of Electrical and Electronics Engineers Inc. 2014 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/39111/1/39111_Novel%20low-voltage%20RF-MEMS%20switch.pdf application/pdf en http://irep.iium.edu.my/39111/2/39111_Novel%20low-voltage%20RF-MEMS%20switch_SCOPUS.pdf Ma, Li Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2014) Novel low-voltage RF-MEMS switch: design and simulation. In: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 27th-29th Aug 2014, Kuala Lumpur. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6920816&tag=1 10.1109/SMELEC.2014.6920816
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	T Technology (General)
spellingShingle	T Technology (General) Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin Novel low-voltage RF-MEMS switch: design and simulation
description	This paper presents a novel design of a low-voltage radio frequency (RF) micro-electromechanical system (MEMS) switch with its electro-mechanical and microwave characteristics’ simulation, as well as its virtual fabrication process. The RF-MEMS switch employs a shunt capacitive structure. There are eight beams supporting a rectangular membrane to suspend over a coplanar waveguide (CPW) transmission line. The outer four crab-leg beams are used to bypass the signal line to the ground by the coupling capacitance and via when switch is actuated; and the inner four serpentine beams are used to supply the DC actuation voltage to the membrane. The developed RF-MEMS switch has a very low pull-in voltage of 3.53V; and the maximum von Mises stress under actuated condition is 13.1808MPa. The capacitance ratio of the switch is 218.5, with switch-on capacitance of 68fF. The switch’s microwave characteristics are obtained by AWR Design Environment 10® simulation; its insertion loss and isolation is -1.7532dB and -18.394dB respectively at 20GHz; and at frequency of 60GHz, the insertion loss is -7.2499dB and isolation is -27.293dB. A simple low-cost three-mask process with photoresist (PR-S1800) as sacrifice layer to release the membrane is proposed in this design; and a virtual fabricated device is simulated using IntelliFab v8.7® software.
format	Conference or Workshop Item
author	Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin
author_facet	Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin
author_sort	Ma, Li Ya
title	Novel low-voltage RF-MEMS switch: design and simulation
title_short	Novel low-voltage RF-MEMS switch: design and simulation
title_full	Novel low-voltage RF-MEMS switch: design and simulation
title_fullStr	Novel low-voltage RF-MEMS switch: design and simulation
title_full_unstemmed	Novel low-voltage RF-MEMS switch: design and simulation
title_sort	novel low-voltage rf-mems switch: design and simulation
publisher	Institute of Electrical and Electronics Engineers Inc.
publishDate	2014
url	http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/1/39111_Novel%20low-voltage%20RF-MEMS%20switch.pdf http://irep.iium.edu.my/39111/2/39111_Novel%20low-voltage%20RF-MEMS%20switch_SCOPUS.pdf
first_indexed	2023-09-18T20:56:11Z
last_indexed	2023-09-18T20:56:11Z
_version_	1777410319712256000

Novel low-voltage RF-MEMS switch: design and simulation

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