Analysis of electrical responses of MEMS piezoresistive microcantilever

In this paper, an optimization of mechanical and electrical performance of single-layer silicon piezoresistive microcantilever (PRM) sensor in which both piezoresistor and microcantilever structures are made of the same material of single-crystalline silicon was discussed. Using CoventorWare 2008, t...

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Main Authors:	Ab Rahim, Rosminazuin, Ookar Abubakkar, Sheik Fareed, Bais, Badariah, Yeop Majlis, Burhanuddin
Format:	Conference or Workshop Item
Language:	English English
Published:	2014
Subjects:	T Technology (General)
Online Access:	http://irep.iium.edu.my/39191/ http://irep.iium.edu.my/39191/ http://irep.iium.edu.my/39191/1/39191.pdf http://irep.iium.edu.my/39191/4/39191_Analysis%20of%20electrical%20responses%20of%20MEMS_Scopus.pdf

id	iium-39191
recordtype	eprints
spelling	iium-391912017-09-19T12:07:19Z http://irep.iium.edu.my/39191/ Analysis of electrical responses of MEMS piezoresistive microcantilever Ab Rahim, Rosminazuin Ookar Abubakkar, Sheik Fareed Bais, Badariah Yeop Majlis, Burhanuddin T Technology (General) In this paper, an optimization of mechanical and electrical performance of single-layer silicon piezoresistive microcantilever (PRM) sensor in which both piezoresistor and microcantilever structures are made of the same material of single-crystalline silicon was discussed. Using CoventorWare 2008, the mechanical and electrical behaviors of the PRM structure was investigated by studying few contributing factors that affect the performance of the device. The performance of PRM sensor was investigated by observing the effects of applied loads to the current change and sensitivity of the device. Apart from that, the effects of thermal noise to the device’s performance were also investigated. From the simulation results, at applied loads between 1 to 10 µN, significant current increase of about 0.094% was observed. This current increase can be translated into an increase of sensitivity in the device. Simulation results also revealed that at temperature change between 290 K to 300 K, the PRM sensor shows insignificant change to sensitivity. 2014 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/39191/1/39191.pdf application/pdf en http://irep.iium.edu.my/39191/4/39191_Analysis%20of%20electrical%20responses%20of%20MEMS_Scopus.pdf Ab Rahim, Rosminazuin and Ookar Abubakkar, Sheik Fareed and Bais, Badariah and Yeop Majlis, Burhanuddin (2014) Analysis of electrical responses of MEMS piezoresistive microcantilever. In: 5th International Conference on Computer and Communication Engineering (ICCCE 2014), 23th - 25th September 2014, Kuala Lumpur. http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7031616
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	T Technology (General)
spellingShingle	T Technology (General) Ab Rahim, Rosminazuin Ookar Abubakkar, Sheik Fareed Bais, Badariah Yeop Majlis, Burhanuddin Analysis of electrical responses of MEMS piezoresistive microcantilever
description	In this paper, an optimization of mechanical and electrical performance of single-layer silicon piezoresistive microcantilever (PRM) sensor in which both piezoresistor and microcantilever structures are made of the same material of single-crystalline silicon was discussed. Using CoventorWare 2008, the mechanical and electrical behaviors of the PRM structure was investigated by studying few contributing factors that affect the performance of the device. The performance of PRM sensor was investigated by observing the effects of applied loads to the current change and sensitivity of the device. Apart from that, the effects of thermal noise to the device’s performance were also investigated. From the simulation results, at applied loads between 1 to 10 µN, significant current increase of about 0.094% was observed. This current increase can be translated into an increase of sensitivity in the device. Simulation results also revealed that at temperature change between 290 K to 300 K, the PRM sensor shows insignificant change to sensitivity.
format	Conference or Workshop Item
author	Ab Rahim, Rosminazuin Ookar Abubakkar, Sheik Fareed Bais, Badariah Yeop Majlis, Burhanuddin
author_facet	Ab Rahim, Rosminazuin Ookar Abubakkar, Sheik Fareed Bais, Badariah Yeop Majlis, Burhanuddin
author_sort	Ab Rahim, Rosminazuin
title	Analysis of electrical responses of MEMS piezoresistive microcantilever
title_short	Analysis of electrical responses of MEMS piezoresistive microcantilever
title_full	Analysis of electrical responses of MEMS piezoresistive microcantilever
title_fullStr	Analysis of electrical responses of MEMS piezoresistive microcantilever
title_full_unstemmed	Analysis of electrical responses of MEMS piezoresistive microcantilever
title_sort	analysis of electrical responses of mems piezoresistive microcantilever
publishDate	2014
url	http://irep.iium.edu.my/39191/ http://irep.iium.edu.my/39191/ http://irep.iium.edu.my/39191/1/39191.pdf http://irep.iium.edu.my/39191/4/39191_Analysis%20of%20electrical%20responses%20of%20MEMS_Scopus.pdf
first_indexed	2023-09-18T20:56:17Z
last_indexed	2023-09-18T20:56:17Z
_version_	1777410326260613120

Analysis of electrical responses of MEMS piezoresistive microcantilever

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