Electronic state transition in cooperatively interacting point-defects in semiconductor crystals

Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K whi...

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Main Authors:	Mohamed, Mohd Ambri, Majlis, Yeop Burhanuddin, Ani, Mohd Hanafi
Format:	Conference or Workshop Item
Language:	English
Published:	IEEE 2014
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/1/electronic_state_transition_in_cooperatively_interacting_point_defect_in_semiconductor_crystals.pdf

id	iium-40449
recordtype	eprints
spelling	iium-404492017-08-25T01:05:29Z http://irep.iium.edu.my/40449/ Electronic state transition in cooperatively interacting point-defects in semiconductor crystals Mohamed, Mohd Ambri Majlis, Yeop Burhanuddin Ani, Mohd Hanafi TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K which is consistent with abrupt decrease of magnetization. These observations are explained as a result of cooperative transition of electron states of AsGa defects. First-principal calculations of the electron state of an AsGa atom with a shallow acceptor Be show that at the transition an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom and finally results in formation of a hole producing enhancement in conductivity. IEEE 2014-10-10 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/40449/1/electronic_state_transition_in_cooperatively_interacting_point_defect_in_semiconductor_crystals.pdf Mohamed, Mohd Ambri and Majlis, Yeop Burhanuddin and Ani, Mohd Hanafi (2014) Electronic state transition in cooperatively interacting point-defects in semiconductor crystals. In: 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, 27 - 29 August 2014, Berjaya Times Square Hotel Kuala Lumpur; Malaysia. http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6920844 10.1109/SMELEC.2014.6920844
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Mohamed, Mohd Ambri Majlis, Yeop Burhanuddin Ani, Mohd Hanafi Electronic state transition in cooperatively interacting point-defects in semiconductor crystals
description	Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K which is consistent with abrupt decrease of magnetization. These observations are explained as a result of cooperative transition of electron states of AsGa defects. First-principal calculations of the electron state of an AsGa atom with a shallow acceptor Be show that at the transition an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom and finally results in formation of a hole producing enhancement in conductivity.
format	Conference or Workshop Item
author	Mohamed, Mohd Ambri Majlis, Yeop Burhanuddin Ani, Mohd Hanafi
author_facet	Mohamed, Mohd Ambri Majlis, Yeop Burhanuddin Ani, Mohd Hanafi
author_sort	Mohamed, Mohd Ambri
title	Electronic state transition in cooperatively interacting point-defects in semiconductor crystals
title_short	Electronic state transition in cooperatively interacting point-defects in semiconductor crystals
title_full	Electronic state transition in cooperatively interacting point-defects in semiconductor crystals
title_fullStr	Electronic state transition in cooperatively interacting point-defects in semiconductor crystals
title_full_unstemmed	Electronic state transition in cooperatively interacting point-defects in semiconductor crystals
title_sort	electronic state transition in cooperatively interacting point-defects in semiconductor crystals
publisher	IEEE
publishDate	2014
url	http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/1/electronic_state_transition_in_cooperatively_interacting_point_defect_in_semiconductor_crystals.pdf
first_indexed	2023-09-18T20:58:02Z
last_indexed	2023-09-18T20:58:02Z
_version_	1777410436382064640

Electronic state transition in cooperatively interacting point-defects in semiconductor crystals

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