Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method

Instead of titanium dioxide (TiO2), many researches have been done to explore the compatibility of zinc oxide (ZnO) to be used as the active layer of memristor. In this study, an Au/ZnO-Cu2O-CuO/Cu memristor was fabricated using dilute electrodeposition and subsequently thermal oxidation. The XRD re...

Full description

Bibliographic Details
Main Authors:	Fauzi, Fatin Bazilah, Othman, Raihan, Mohamed, Mohd Ambri, Herman, Sukreen Hana, Ahmad Azhar, Ahmad Zahirani, Ani, Mohd Hanafi
Format:	Article
Language:	English
Published:	Japan Institute of Metals 2015
Subjects:	TA401 Materials of engineering and construction
Online Access:	http://irep.iium.edu.my/44034/ http://irep.iium.edu.my/44034/ http://irep.iium.edu.my/44034/ http://irep.iium.edu.my/44034/1/Transition_metal_oxide_thin_film_memristor_on_cu_substrate_using_dilute_electrodeposition_method.pdf

id	iium-44034
recordtype	eprints
spelling	iium-440342017-05-17T00:52:50Z http://irep.iium.edu.my/44034/ Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method Fauzi, Fatin Bazilah Othman, Raihan Mohamed, Mohd Ambri Herman, Sukreen Hana Ahmad Azhar, Ahmad Zahirani Ani, Mohd Hanafi TA401 Materials of engineering and construction Instead of titanium dioxide (TiO2), many researches have been done to explore the compatibility of zinc oxide (ZnO) to be used as the active layer of memristor. In this study, an Au/ZnO-Cu2O-CuO/Cu memristor was fabricated using dilute electrodeposition and subsequently thermal oxidation. The XRD result indicates that Zn was oxidized to ZnO and has a wurzite structure while copper (Cu) substrate was also oxidized to copper (I) oxide (Cu2O) and copper (II) oxide (CuO). The surface morphology of ZnO shows the formation of needle-like structure on the surface after the thermal oxidation process. 15 s deposited ZnO-Cu2O-CuO gave the thinnest film of 81 nm with largest value of resistance difference of 14.11 k3 and resistive switching ratio of 3.76. Empirical study on thermodynamics of metal oxides and diffusivity of Zn2+ and O21 in ZnO shows that the structure is formed due to the difference of diffusivity of each species during the thermal oxidation process. The synthesized Au/ZnO-Cu2O-CuO/Cu memristor shows a potential application in production of a non-complex and low cost memristor. Japan Institute of Metals 2015 Article PeerReviewed application/pdf en http://irep.iium.edu.my/44034/1/Transition_metal_oxide_thin_film_memristor_on_cu_substrate_using_dilute_electrodeposition_method.pdf Fauzi, Fatin Bazilah and Othman, Raihan and Mohamed, Mohd Ambri and Herman, Sukreen Hana and Ahmad Azhar, Ahmad Zahirani and Ani, Mohd Hanafi (2015) Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method. Materials Transactions, 56 (8). pp. 1302-1306. ISSN 1347-5320 (O), 1345-9678 (P) https://www.jim.or.jp/journal/e/ 10.2320/matertrans.M2015166
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TA401 Materials of engineering and construction
spellingShingle	TA401 Materials of engineering and construction Fauzi, Fatin Bazilah Othman, Raihan Mohamed, Mohd Ambri Herman, Sukreen Hana Ahmad Azhar, Ahmad Zahirani Ani, Mohd Hanafi Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method
description	Instead of titanium dioxide (TiO2), many researches have been done to explore the compatibility of zinc oxide (ZnO) to be used as the active layer of memristor. In this study, an Au/ZnO-Cu2O-CuO/Cu memristor was fabricated using dilute electrodeposition and subsequently thermal oxidation. The XRD result indicates that Zn was oxidized to ZnO and has a wurzite structure while copper (Cu) substrate was also oxidized to copper (I) oxide (Cu2O) and copper (II) oxide (CuO). The surface morphology of ZnO shows the formation of needle-like structure on the surface after the thermal oxidation process. 15 s deposited ZnO-Cu2O-CuO gave the thinnest film of 81 nm with largest value of resistance difference of 14.11 k3 and resistive switching ratio of 3.76. Empirical study on thermodynamics of metal oxides and diffusivity of Zn2+ and O21 in ZnO shows that the structure is formed due to the difference of diffusivity of each species during the thermal oxidation process. The synthesized Au/ZnO-Cu2O-CuO/Cu memristor shows a potential application in production of a non-complex and low cost memristor.
format	Article
author	Fauzi, Fatin Bazilah Othman, Raihan Mohamed, Mohd Ambri Herman, Sukreen Hana Ahmad Azhar, Ahmad Zahirani Ani, Mohd Hanafi
author_facet	Fauzi, Fatin Bazilah Othman, Raihan Mohamed, Mohd Ambri Herman, Sukreen Hana Ahmad Azhar, Ahmad Zahirani Ani, Mohd Hanafi
author_sort	Fauzi, Fatin Bazilah
title	Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method
title_short	Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method
title_full	Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method
title_fullStr	Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method
title_full_unstemmed	Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method
title_sort	transition metal oxide (tmo) thin film memristor on cu substrate using dilute electrodeposition method
publisher	Japan Institute of Metals
publishDate	2015
url	http://irep.iium.edu.my/44034/ http://irep.iium.edu.my/44034/ http://irep.iium.edu.my/44034/ http://irep.iium.edu.my/44034/1/Transition_metal_oxide_thin_film_memristor_on_cu_substrate_using_dilute_electrodeposition_method.pdf
first_indexed	2023-09-18T21:02:38Z
last_indexed	2023-09-18T21:02:38Z
_version_	1777410725328715776

Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method

Similar Items