A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch

This paper presents a novel design and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The RF-MEMS switch is actuated by electrostatic force with low-actuation voltage of 2.9V while it can be operated in a robust condition with maximum von Mises stress of 13...

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Main Authors:	Ma, Li-Ya, Soin, Norhayati, Nordin, Anis Nurashikin
Format:	Conference or Workshop Item
Language:	English English
Published:	IEEE 2018
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/2/52022.pdf http://irep.iium.edu.my/52022/3/52022-A%20novel%20design%20of%20low-voltage%20low-loss%20K-Band%20RF-MEMS%20capacitive%20switch_SCOPUS.pdf

id	iium-52022
recordtype	eprints
spelling	iium-520222019-07-18T06:46:18Z http://irep.iium.edu.my/52022/ A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices This paper presents a novel design and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The RF-MEMS switch is actuated by electrostatic force with low-actuation voltage of 2.9V while it can be operated in a robust condition with maximum von Mises stress of 13.208 MPa which is less than aluminum’s yield stress. By finite-element-modeling (FEM) simulations, at switch-on state, insertion loss and reflection loss of the proposed RF-MEMS switch is obtained as -0.8023dB and -7.983dB, respectively; and at switch-off state, isolation and return loss is -22.45dB and - 0.8666dB, respectively. In order to improve the switch-on reflection loss to meet design specifications, two short high- impedance sections of transmission line have been calculated and added to the RF-MEMS switch. Then the reflection coefficient at switch-on state has been increased by 78.13% to -14.22dB which is less than -10dB while the insertion loss, isolation and return loss are all improved by 66.54%, 13.36% and 11.65%, respectively, with 65ohm high-impedance lines. The RF-MEMS switch’s actuation time of 27μs is obtained. A detail comparison among the proposed RF-MEMS switch and other state-of-the-art designs has been summarized in the end. IEEE 2018-01-01 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/52022/2/52022.pdf application/pdf en http://irep.iium.edu.my/52022/3/52022-A%20novel%20design%20of%20low-voltage%20low-loss%20K-Band%20RF-MEMS%20capacitive%20switch_SCOPUS.pdf Ma, Li-Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2018) A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch. In: Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP), 30th May-2nd June 2016, Budapest, Hungary. http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7514827 10.1109/DTIP.2016.7514827
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch
description	This paper presents a novel design and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The RF-MEMS switch is actuated by electrostatic force with low-actuation voltage of 2.9V while it can be operated in a robust condition with maximum von Mises stress of 13.208 MPa which is less than aluminum’s yield stress. By finite-element-modeling (FEM) simulations, at switch-on state, insertion loss and reflection loss of the proposed RF-MEMS switch is obtained as -0.8023dB and -7.983dB, respectively; and at switch-off state, isolation and return loss is -22.45dB and - 0.8666dB, respectively. In order to improve the switch-on reflection loss to meet design specifications, two short high- impedance sections of transmission line have been calculated and added to the RF-MEMS switch. Then the reflection coefficient at switch-on state has been increased by 78.13% to -14.22dB which is less than -10dB while the insertion loss, isolation and return loss are all improved by 66.54%, 13.36% and 11.65%, respectively, with 65ohm high-impedance lines. The RF-MEMS switch’s actuation time of 27μs is obtained. A detail comparison among the proposed RF-MEMS switch and other state-of-the-art designs has been summarized in the end.
format	Conference or Workshop Item
author	Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin
author_facet	Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin
author_sort	Ma, Li-Ya
title	A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch
title_short	A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch
title_full	A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch
title_fullStr	A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch
title_full_unstemmed	A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch
title_sort	novel design of low-voltage low-loss k-band rf-mems capacitive switch
publisher	IEEE
publishDate	2018
url	http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/ http://irep.iium.edu.my/52022/2/52022.pdf http://irep.iium.edu.my/52022/3/52022-A%20novel%20design%20of%20low-voltage%20low-loss%20K-Band%20RF-MEMS%20capacitive%20switch_SCOPUS.pdf
first_indexed	2023-09-18T21:13:45Z
last_indexed	2023-09-18T21:13:45Z
_version_	1777411424944914432

A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch

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