Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass
Commercially fabricated nitride-based light emitting diodes (LEDs) is of interest due to its attractive material properties of high temperature tolerance and breakdown strength, making it suitable to be used in extreme environment. Hence, our focus is on the electrical characterization of comme...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IEEE
2016
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/52428/ http://irep.iium.edu.my/52428/ http://irep.iium.edu.my/52428/ http://irep.iium.edu.my/52428/3/52428-edited.pdf http://irep.iium.edu.my/52428/4/52428-Electrical%20Characterization%20of%20Commercial%20GaN%20LEDs%20Subjected%20to%20Electron%20Radiation%20with%20Different%20Conveyor%20Speed%20per%20Pass_SCOPUS.pdf |
| Summary: | Commercially fabricated nitride-based light
emitting diodes (LEDs) is of interest due to its
attractive material properties of high temperature
tolerance and breakdown strength, making it suitable
to be used in extreme environment. Hence, our focus is
on the electrical characterization of commercial
Gallium Nitride (GaN) subjected to 1000kGy and
1500kGy dose of electron radiation with the conveyor
speed were adjusted to 100kGy and 50kGy per pass.
Capacitance-voltage (C-V) and current-voltage (I-V)
characteristics of commercial GaN LEDs before and
after radiation have been investigated. I-V
measurement shows no presence of current and
measurement of C-V shows no presence of capacitance
after irradiated with both dose level at the conveyor
speed of 100kGy per pass, indicating an open circuit
problem. However, LEDs that were irradiated with the
same amount of dose with a conveyor speed of 50kGy
per pass shows an increase in reverse leakage current |
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