Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass

Commercially fabricated nitride-based light emitting diodes (LEDs) is of interest due to its attractive material properties of high temperature tolerance and breakdown strength, making it suitable to be used in extreme environment. Hence, our focus is on the electrical characterization of comme...

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Main Authors:	Hedzir, Anati Syahirah, Hasbullah, Nurul Fadzlin, Abdullah, Yusof, Muridan, Norasmahan
Format:	Conference or Workshop Item
Language:	English English
Published:	IEEE 2016
Subjects:	T Technology (General)
Online Access:	http://irep.iium.edu.my/52428/ http://irep.iium.edu.my/52428/ http://irep.iium.edu.my/52428/ http://irep.iium.edu.my/52428/3/52428-edited.pdf http://irep.iium.edu.my/52428/4/52428-Electrical%20Characterization%20of%20Commercial%20GaN%20LEDs%20Subjected%20to%20Electron%20Radiation%20with%20Different%20Conveyor%20Speed%20per%20Pass_SCOPUS.pdf

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recordtype	eprints
spelling	iium-524282017-03-29T03:21:17Z http://irep.iium.edu.my/52428/ Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Abdullah, Yusof Muridan, Norasmahan T Technology (General) Commercially fabricated nitride-based light emitting diodes (LEDs) is of interest due to its attractive material properties of high temperature tolerance and breakdown strength, making it suitable to be used in extreme environment. Hence, our focus is on the electrical characterization of commercial Gallium Nitride (GaN) subjected to 1000kGy and 1500kGy dose of electron radiation with the conveyor speed were adjusted to 100kGy and 50kGy per pass. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of commercial GaN LEDs before and after radiation have been investigated. I-V measurement shows no presence of current and measurement of C-V shows no presence of capacitance after irradiated with both dose level at the conveyor speed of 100kGy per pass, indicating an open circuit problem. However, LEDs that were irradiated with the same amount of dose with a conveyor speed of 50kGy per pass shows an increase in reverse leakage current IEEE 2016 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/52428/3/52428-edited.pdf application/pdf en http://irep.iium.edu.my/52428/4/52428-Electrical%20Characterization%20of%20Commercial%20GaN%20LEDs%20Subjected%20to%20Electron%20Radiation%20with%20Different%20Conveyor%20Speed%20per%20Pass_SCOPUS.pdf Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Abdullah, Yusof and Muridan, Norasmahan (2016) Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur. http://ieeexplore.ieee.org/document/7808343/ 10.1109/ICCCE.2016.85
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	T Technology (General)
spellingShingle	T Technology (General) Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Abdullah, Yusof Muridan, Norasmahan Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass
description	Commercially fabricated nitride-based light emitting diodes (LEDs) is of interest due to its attractive material properties of high temperature tolerance and breakdown strength, making it suitable to be used in extreme environment. Hence, our focus is on the electrical characterization of commercial Gallium Nitride (GaN) subjected to 1000kGy and 1500kGy dose of electron radiation with the conveyor speed were adjusted to 100kGy and 50kGy per pass. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of commercial GaN LEDs before and after radiation have been investigated. I-V measurement shows no presence of current and measurement of C-V shows no presence of capacitance after irradiated with both dose level at the conveyor speed of 100kGy per pass, indicating an open circuit problem. However, LEDs that were irradiated with the same amount of dose with a conveyor speed of 50kGy per pass shows an increase in reverse leakage current
format	Conference or Workshop Item
author	Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Abdullah, Yusof Muridan, Norasmahan
author_facet	Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Abdullah, Yusof Muridan, Norasmahan
author_sort	Hedzir, Anati Syahirah
title	Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass
title_short	Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass
title_full	Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass
title_fullStr	Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass
title_full_unstemmed	Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass
title_sort	electrical characterization of commercial gan leds subjected to electron radiation with different conveyor speed per pass
publisher	IEEE
publishDate	2016
url	http://irep.iium.edu.my/52428/ http://irep.iium.edu.my/52428/ http://irep.iium.edu.my/52428/ http://irep.iium.edu.my/52428/3/52428-edited.pdf http://irep.iium.edu.my/52428/4/52428-Electrical%20Characterization%20of%20Commercial%20GaN%20LEDs%20Subjected%20to%20Electron%20Radiation%20with%20Different%20Conveyor%20Speed%20per%20Pass_SCOPUS.pdf
first_indexed	2023-09-18T21:14:18Z
last_indexed	2023-09-18T21:14:18Z
_version_	1777411459473473536

Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass

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