A review of leakage current mechanism in nitride based light emitting diode

We review the dominant mechanism and characteristics which give rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). The existence of leakage current can affect the reliability and efficiency of LED. Hence, to understand the mechanism that is resp...

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Main Authors:	Hedzir, Anati Syahirah, Muridan, Norasmahan, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English
Published:	Penerbit UTM Press 2016
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://irep.iium.edu.my/56260/ http://irep.iium.edu.my/56260/ http://irep.iium.edu.my/56260/1/56260_A%20review%20of%20leakage%20current%20mechanism%20in%20nitride%20based%20light.pdf http://irep.iium.edu.my/56260/7/56260_A%20review%20of%20leakage%20current%20mechanism_WOS.pdf

id	iium-56260
recordtype	eprints
spelling	iium-562602017-04-05T06:34:25Z http://irep.iium.edu.my/56260/ A review of leakage current mechanism in nitride based light emitting diode Hedzir, Anati Syahirah Muridan, Norasmahan Hasbullah, Nurul Fadzlin TA Engineering (General). Civil engineering (General) We review the dominant mechanism and characteristics which give rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). The existence of leakage current can affect the reliability and efficiency of LED. Hence, to understand the mechanism that is responsible for its existence, the occurrence of leakage current is divided into three main parameters: 1) low bias; 2) medium or high bias; 3) temperature dependence. For reverse bias, many reports suggest Poole-Frenkel as the dominant mechanism in low reverse bias and some others suggested the field dependent tunneling mechanism. In high reverse bias, many studies have shown tunneling to be the dominant mechanism. However ,there is also few other papers suggesting variable range hopping (VRH) or PF being a dominant mechanism. When the reverse bias currentvoltage measurement below 200 K, majority studies reported VRH to be the dominant mechanism. Meanwhile, for forward bias, defect-assisted tunneling is most likely the dominant mechanism. At low forward voltages, electrons are believed to be the dominant carriers for defect assisted tunneling, while holes are reported to be likely the dominant carrier in medium forward voltages. Penerbit UTM Press 2016 Article PeerReviewed application/pdf en http://irep.iium.edu.my/56260/1/56260_A%20review%20of%20leakage%20current%20mechanism%20in%20nitride%20based%20light.pdf application/pdf en http://irep.iium.edu.my/56260/7/56260_A%20review%20of%20leakage%20current%20mechanism_WOS.pdf Hedzir, Anati Syahirah and Muridan, Norasmahan and Hasbullah, Nurul Fadzlin (2016) A review of leakage current mechanism in nitride based light emitting diode. Malaysian Journal of Fundamental and Applied Sciences, 12 (2). pp. 77-84. ISSN 2289-5981 E-ISSN 2289-599X http://www.mjfas.utm.my/index.php/mjfas/article/view/412
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TA Engineering (General). Civil engineering (General)
spellingShingle	TA Engineering (General). Civil engineering (General) Hedzir, Anati Syahirah Muridan, Norasmahan Hasbullah, Nurul Fadzlin A review of leakage current mechanism in nitride based light emitting diode
description	We review the dominant mechanism and characteristics which give rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). The existence of leakage current can affect the reliability and efficiency of LED. Hence, to understand the mechanism that is responsible for its existence, the occurrence of leakage current is divided into three main parameters: 1) low bias; 2) medium or high bias; 3) temperature dependence. For reverse bias, many reports suggest Poole-Frenkel as the dominant mechanism in low reverse bias and some others suggested the field dependent tunneling mechanism. In high reverse bias, many studies have shown tunneling to be the dominant mechanism. However ,there is also few other papers suggesting variable range hopping (VRH) or PF being a dominant mechanism. When the reverse bias currentvoltage measurement below 200 K, majority studies reported VRH to be the dominant mechanism. Meanwhile, for forward bias, defect-assisted tunneling is most likely the dominant mechanism. At low forward voltages, electrons are believed to be the dominant carriers for defect assisted tunneling, while holes are reported to be likely the dominant carrier in medium forward voltages.
format	Article
author	Hedzir, Anati Syahirah Muridan, Norasmahan Hasbullah, Nurul Fadzlin
author_facet	Hedzir, Anati Syahirah Muridan, Norasmahan Hasbullah, Nurul Fadzlin
author_sort	Hedzir, Anati Syahirah
title	A review of leakage current mechanism in nitride based light emitting diode
title_short	A review of leakage current mechanism in nitride based light emitting diode
title_full	A review of leakage current mechanism in nitride based light emitting diode
title_fullStr	A review of leakage current mechanism in nitride based light emitting diode
title_full_unstemmed	A review of leakage current mechanism in nitride based light emitting diode
title_sort	review of leakage current mechanism in nitride based light emitting diode
publisher	Penerbit UTM Press
publishDate	2016
url	http://irep.iium.edu.my/56260/ http://irep.iium.edu.my/56260/ http://irep.iium.edu.my/56260/1/56260_A%20review%20of%20leakage%20current%20mechanism%20in%20nitride%20based%20light.pdf http://irep.iium.edu.my/56260/7/56260_A%20review%20of%20leakage%20current%20mechanism_WOS.pdf
first_indexed	2023-09-18T21:19:20Z
last_indexed	2023-09-18T21:19:20Z
_version_	1777411776289177600

A review of leakage current mechanism in nitride based light emitting diode

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