Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride

Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride

This paper presents the improvement of certain important characteristics of 1.55 µm laser by reducing the dependence of cavity length using InN based quantum dot in the active layer of the device structure. The improvement of these characteristics has been investigated in terms of ultra low threshol...

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Main Authors: Humayun, M A, Khan, Sheroz, Alam, A. H. M. Zahirul, AbdulMalek, MohamedFareq, Rashid, M. A.
Format: Article
Language:English
English
English
Published: INOE Publishing House 2017
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:http://irep.iium.edu.my/57384/
http://irep.iium.edu.my/57384/
http://irep.iium.edu.my/57384/1/2Humayun.pdf
http://irep.iium.edu.my/57384/7/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_SCOPUS.pdf
http://irep.iium.edu.my/57384/8/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_WOS.pdf
id iium-57384
recordtype eprints
spelling iium-573842018-03-25T08:27:01Z http://irep.iium.edu.my/57384/ Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride Humayun, M A Khan, Sheroz Alam, A. H. M. Zahirul AbdulMalek, MohamedFareq Rashid, M. A. TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices This paper presents the improvement of certain important characteristics of 1.55 µm laser by reducing the dependence of cavity length using InN based quantum dot in the active layer of the device structure. The improvement of these characteristics has been investigated in terms of ultra low threshold current density, minimization of internal loss, enhancement of the modal gain, external differential efficiency and the photon lifetime. In this paper these characteristics have been investigated using InN based quantum dot in the active layer of the laser structure and compared with GaN and AlN based quantum dot laser. The comparison results reveal that InN based quantum dot provides lower threshold current density, reduced internal loss compared to GaN and AlN quantum dot based laser. Beside these enhanced modal gain, improved efficiency and higher photon lifetime have also been reported using InN based quantum dot in the active layer of the laser structure. In addition to these improvements obtained from the numerical results it is ascertained that InN based quantum dot in the active layer of the laser structure offers weaker dependence of cavity length on these characteristics. From the results it is revealed that InN can be a promising material to design high performance quantum dot based laser operating at 1.55 µm with reduced cavity length dependence in the very near future. INOE Publishing House 2017-05 Article PeerReviewed application/pdf en http://irep.iium.edu.my/57384/1/2Humayun.pdf application/pdf en http://irep.iium.edu.my/57384/7/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_SCOPUS.pdf application/pdf en http://irep.iium.edu.my/57384/8/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_WOS.pdf Humayun, M A and Khan, Sheroz and Alam, A. H. M. Zahirul and AbdulMalek, MohamedFareq and Rashid, M. A. (2017) Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride. Journal of Optoelectronics and Advanced Materials, 19 (5-6 (May-June)). 298- 302. ISSN 1454-4164 E-ISSN 1841-7132 https://joam.inoe.ro/index.php?option=magazine&op=view&idu=4102&catid=103
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
English
English
topic TK Electrical engineering. Electronics Nuclear engineering
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Humayun, M A
Khan, Sheroz
Alam, A. H. M. Zahirul
AbdulMalek, MohamedFareq
Rashid, M. A.
Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride
description This paper presents the improvement of certain important characteristics of 1.55 µm laser by reducing the dependence of cavity length using InN based quantum dot in the active layer of the device structure. The improvement of these characteristics has been investigated in terms of ultra low threshold current density, minimization of internal loss, enhancement of the modal gain, external differential efficiency and the photon lifetime. In this paper these characteristics have been investigated using InN based quantum dot in the active layer of the laser structure and compared with GaN and AlN based quantum dot laser. The comparison results reveal that InN based quantum dot provides lower threshold current density, reduced internal loss compared to GaN and AlN quantum dot based laser. Beside these enhanced modal gain, improved efficiency and higher photon lifetime have also been reported using InN based quantum dot in the active layer of the laser structure. In addition to these improvements obtained from the numerical results it is ascertained that InN based quantum dot in the active layer of the laser structure offers weaker dependence of cavity length on these characteristics. From the results it is revealed that InN can be a promising material to design high performance quantum dot based laser operating at 1.55 µm with reduced cavity length dependence in the very near future.
format Article
author Humayun, M A
Khan, Sheroz
Alam, A. H. M. Zahirul
AbdulMalek, MohamedFareq
Rashid, M. A.
author_facet Humayun, M A
Khan, Sheroz
Alam, A. H. M. Zahirul
AbdulMalek, MohamedFareq
Rashid, M. A.
author_sort Humayun, M A
title Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride
title_short Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride
title_full Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride
title_fullStr Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride
title_full_unstemmed Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride
title_sort reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based laser using indium nitride
publisher INOE Publishing House
publishDate 2017
url http://irep.iium.edu.my/57384/
http://irep.iium.edu.my/57384/
http://irep.iium.edu.my/57384/1/2Humayun.pdf
http://irep.iium.edu.my/57384/7/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_SCOPUS.pdf
http://irep.iium.edu.my/57384/8/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_WOS.pdf
first_indexed 2023-09-18T21:21:07Z
last_indexed 2023-09-18T21:21:07Z
_version_ 1777411888022290432

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