Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride
This paper presents the improvement of certain important characteristics of 1.55 µm laser by reducing the dependence of cavity length using InN based quantum dot in the active layer of the device structure. The improvement of these characteristics has been investigated in terms of ultra low threshol...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English English English |
| Published: |
INOE Publishing House
2017
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/57384/ http://irep.iium.edu.my/57384/ http://irep.iium.edu.my/57384/1/2Humayun.pdf http://irep.iium.edu.my/57384/7/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_SCOPUS.pdf http://irep.iium.edu.my/57384/8/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_WOS.pdf |