Development of high frequency 14 nm CNTFET model
Carbon nanotube field-effect transistor (CNTFET) is a nano scale electronics device that has excellent electrical proper to perform fast operation. In this research, a 14 nm CNTFET model has been proposed to operate in high frequency performance. The CNTFET model is developed by quantum capacitance...
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iium-587562017-10-12T10:33:57Z http://irep.iium.edu.my/58756/ Development of high frequency 14 nm CNTFET model Farhana, Soheli Alam, A.H.M Zahirul QC Physics TA Engineering (General). Civil engineering (General) Carbon nanotube field-effect transistor (CNTFET) is a nano scale electronics device that has excellent electrical proper to perform fast operation. In this research, a 14 nm CNTFET model has been proposed to operate in high frequency performance. The CNTFET model is developed by quantum capacitance and electrostatic capacitance to enhance the mode of nanotube transistor. It can be used for design of nanotube transistor circuits as well as to study performance. A model of the Carbon nanotube transistor with the influence of quantum capacitance and ballistic transport on the high-frequency properties of nanotube transistors is also analyzed in this research. Elsevier Ltd 2016 Article PeerReviewed application/pdf en http://irep.iium.edu.my/58756/1/58756_Development%20of%20High%20Frequency_article.pdf application/pdf en http://irep.iium.edu.my/58756/2/58756_Development%20of%20High%20Frequency_scopus.pdf Farhana, Soheli and Alam, A.H.M Zahirul (2016) Development of high frequency 14 nm CNTFET model. Materials Today: Proceedings, 3 (2). pp. 258-264. ISSN 22147853 E-ISSN 2214-7853 http://www.sciencedirect.com/science/article/pii/S2214785316000687 10.1016/j.matpr.2016.01.067 |
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QC Physics TA Engineering (General). Civil engineering (General) Farhana, Soheli Alam, A.H.M Zahirul Development of high frequency 14 nm CNTFET model |
description |
Carbon nanotube field-effect transistor (CNTFET) is a nano scale electronics device that has excellent electrical proper to perform fast operation. In this research, a 14 nm CNTFET model has been proposed to operate in high frequency performance. The CNTFET model is developed by quantum capacitance and electrostatic capacitance to enhance the mode of nanotube transistor. It can be used for design of nanotube transistor circuits as well as to study performance. A model of the Carbon nanotube transistor with the influence of quantum capacitance and ballistic transport on the high-frequency properties of nanotube transistors is also analyzed in this research. |
format |
Article |
author |
Farhana, Soheli Alam, A.H.M Zahirul |
author_facet |
Farhana, Soheli Alam, A.H.M Zahirul |
author_sort |
Farhana, Soheli |
title |
Development of high frequency 14 nm CNTFET model |
title_short |
Development of high frequency 14 nm CNTFET model |
title_full |
Development of high frequency 14 nm CNTFET model |
title_fullStr |
Development of high frequency 14 nm CNTFET model |
title_full_unstemmed |
Development of high frequency 14 nm CNTFET model |
title_sort |
development of high frequency 14 nm cntfet model |
publisher |
Elsevier Ltd |
publishDate |
2016 |
url |
http://irep.iium.edu.my/58756/ http://irep.iium.edu.my/58756/ http://irep.iium.edu.my/58756/ http://irep.iium.edu.my/58756/1/58756_Development%20of%20High%20Frequency_article.pdf http://irep.iium.edu.my/58756/2/58756_Development%20of%20High%20Frequency_scopus.pdf |
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2023-09-18T21:23:07Z |
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2023-09-18T21:23:07Z |
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