A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch
—A low-voltage low-loss K-band 3-bit MEMS switched-line phase shifter is presented in this work. The phase shifter is constructed by novel shunt capacitive RF-MEMS switches and coplanar waveguide lines on a high-resistivity silicon substrate. A low-voltage RF-MEMS switch (pull-in voltage = 3.04...
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| Language: | English English |
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IEEE
2017
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| Online Access: | http://irep.iium.edu.my/61953/ http://irep.iium.edu.my/61953/ http://irep.iium.edu.my/61953/ http://irep.iium.edu.my/61953/1/61953-A%20K-Band%20Switched-Line%20Phase.pdf http://irep.iium.edu.my/61953/2/61953-A%20K-band%20switched-line%20phase%20shifter-SCOPUS.pdf |
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iium-619532018-06-26T03:55:10Z http://irep.iium.edu.my/61953/ A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin T Technology (General) —A low-voltage low-loss K-band 3-bit MEMS switched-line phase shifter is presented in this work. The phase shifter is constructed by novel shunt capacitive RF-MEMS switches and coplanar waveguide lines on a high-resistivity silicon substrate. A low-voltage RF-MEMS switch (pull-in voltage = 3.04V) is employed and exhibits good RF characteristics by using T-match technique where its insertion loss and isolation is - 0.1291dB and -28.75dB, respectively at frequency of 20GHz. The 3-bit MEMS phase shifter is assembled by three single-bit units (namely, 45°-bit, 90°-bit and 180°-bit) of switched-line structures; the average phase error and average insertion loss is 0.2445° and -2.447dB, respectively, at 20GHz; its return loss is better than 10dB at a wideband frequency range of up to 20GHz. The whole design area is 6mm*4mm IEEE 2017-10-19 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/61953/1/61953-A%20K-Band%20Switched-Line%20Phase.pdf application/pdf en http://irep.iium.edu.my/61953/2/61953-A%20K-band%20switched-line%20phase%20shifter-SCOPUS.pdf Ma, Li-Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2017) A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch. In: 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 23rd - 25th August 2017, Penang, Malaysia. http://ieeexplore.ieee.org/document/8069125/ 10.1109/RSM.2017.8069125 |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
International Islamic University Malaysia |
| building |
IIUM Repository |
| collection |
Online Access |
| language |
English English |
| topic |
T Technology (General) |
| spellingShingle |
T Technology (General) Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch |
| description |
—A low-voltage low-loss K-band 3-bit MEMS
switched-line phase shifter is presented in this work. The phase
shifter is constructed by novel shunt capacitive RF-MEMS
switches and coplanar waveguide lines on a high-resistivity
silicon substrate. A low-voltage RF-MEMS switch (pull-in voltage
= 3.04V) is employed and exhibits good RF characteristics by
using T-match technique where its insertion loss and isolation is -
0.1291dB and -28.75dB, respectively at frequency of 20GHz. The
3-bit MEMS phase shifter is assembled by three single-bit units
(namely, 45°-bit, 90°-bit and 180°-bit) of switched-line structures;
the average phase error and average insertion loss is 0.2445° and
-2.447dB, respectively, at 20GHz; its return loss is better than
10dB at a wideband frequency range of up to 20GHz. The whole
design area is 6mm*4mm |
| format |
Conference or Workshop Item |
| author |
Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_facet |
Ma, Li-Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_sort |
Ma, Li-Ya |
| title |
A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch |
| title_short |
A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch |
| title_full |
A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch |
| title_fullStr |
A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch |
| title_full_unstemmed |
A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch |
| title_sort |
k-band switched-line phase shifter using novel low-voltage low-loss rf-mems switch |
| publisher |
IEEE |
| publishDate |
2017 |
| url |
http://irep.iium.edu.my/61953/ http://irep.iium.edu.my/61953/ http://irep.iium.edu.my/61953/ http://irep.iium.edu.my/61953/1/61953-A%20K-Band%20Switched-Line%20Phase.pdf http://irep.iium.edu.my/61953/2/61953-A%20K-band%20switched-line%20phase%20shifter-SCOPUS.pdf |
| first_indexed |
2023-09-18T21:27:53Z |
| last_indexed |
2023-09-18T21:27:53Z |
| _version_ |
1777412314177208320 |