Electrical characterization of commercial power MOSFET under electron radiation
This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English English |
| Published: |
American Scientific Publishers
2017
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/1/62829_Electrical%20characterization%20of%20commercial_article.pdf http://irep.iium.edu.my/62829/2/62829_Electrical%20characterization%20of%20commercial_scopus.pdf |
| Summary: | This paper presents the threshold voltage shifts for both p-channel and n-channel commercial
power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of
electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms
of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel
MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiationinduced
positive charges dominated in the oxide traps while for p-channel devices it is believed due to
radiation-induced ionization damage. |
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