Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation

Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor s...

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Main Authors:	Abdullah, Yusof, Hedzir, Anati Syahirah, Hasbullah, Nurul Fadzlin, Muridan, Muridan, Norasmahan, Che Hak, Cik Rohaida, Mahat, Sarimah
Format:	Conference or Workshop Item
Language:	English English
Published:	Scientific.Net 2017
Subjects:	T Technology (General)
Online Access:	http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/1/63004%20Radiation%20damage%20study%20of%20electrical%20properties-Abstract-MyRA.pdf http://irep.iium.edu.my/63004/2/63004%20Radiation%20damage%20study%20of%20electrical%20properties%20SCOPUS.pdf

id	iium-63004
recordtype	eprints
spelling	iium-630042018-03-23T07:09:21Z http://irep.iium.edu.my/63004/ Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Muridan, Muridan, Norasmahan Che Hak, Cik Rohaida Mahat, Sarimah T Technology (General) Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor speed of 50 kGy per pass. Capacitance-voltage (C-V) and current-voltage (IV) characterization for both pre and post irradiation samples was done. Both current and capacitance show decreasing while reverse leakage current increased after irradiation. The reverse leakage current revealed that the current were start leakage at 1.0 x10-7 A and 1.0 x10-9 A for 1000 kGy and 1500 kGy irradiations respectively. The current-voltage graph indicated that the effect of electron irradiation on diode produced weak spots as defect cause leakage current. The traps and bulk defect is believed to contributed to the leakage current increased. Scientific.Net 2017 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/63004/1/63004%20Radiation%20damage%20study%20of%20electrical%20properties-Abstract-MyRA.pdf application/pdf en http://irep.iium.edu.my/63004/2/63004%20Radiation%20damage%20study%20of%20electrical%20properties%20SCOPUS.pdf Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Muridan, Muridan, Norasmahan and Che Hak, Cik Rohaida and Mahat, Sarimah (2017) Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation. In: International Conference on X-rays and Related Techniques in Research and Industry 2016 (ICXRI2016),, 17th to 18 th August 2016, Putrajaya, Malaysia. (In Press) https://www.scientific.net/MSF.888.348 10.4028/www.scientific.net/MSF.888.348
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	T Technology (General)
spellingShingle	T Technology (General) Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Muridan, Muridan, Norasmahan Che Hak, Cik Rohaida Mahat, Sarimah Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation
description	Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor speed of 50 kGy per pass. Capacitance-voltage (C-V) and current-voltage (IV) characterization for both pre and post irradiation samples was done. Both current and capacitance show decreasing while reverse leakage current increased after irradiation. The reverse leakage current revealed that the current were start leakage at 1.0 x10-7 A and 1.0 x10-9 A for 1000 kGy and 1500 kGy irradiations respectively. The current-voltage graph indicated that the effect of electron irradiation on diode produced weak spots as defect cause leakage current. The traps and bulk defect is believed to contributed to the leakage current increased.
format	Conference or Workshop Item
author	Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Muridan, Muridan, Norasmahan Che Hak, Cik Rohaida Mahat, Sarimah
author_facet	Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Muridan, Muridan, Norasmahan Che Hak, Cik Rohaida Mahat, Sarimah
author_sort	Abdullah, Yusof
title	Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation
title_short	Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation
title_full	Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation
title_fullStr	Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation
title_full_unstemmed	Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation
title_sort	radiation damage study of electrical properties in gan leds diode after electron irradiation
publisher	Scientific.Net
publishDate	2017
url	http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/ http://irep.iium.edu.my/63004/1/63004%20Radiation%20damage%20study%20of%20electrical%20properties-Abstract-MyRA.pdf http://irep.iium.edu.my/63004/2/63004%20Radiation%20damage%20study%20of%20electrical%20properties%20SCOPUS.pdf
first_indexed	2023-09-18T21:29:18Z
last_indexed	2023-09-18T21:29:18Z
_version_	1777412403509592064

Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation

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