The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forwa...

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Main Authors:	Ganiyev, Sabuhi, Khairi, Mohammad Azim, Ahmad Fauzi, Dhiyauddin, Abdullah, Yusof, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English English
Published:	Maik Nauka-Interperiodica Publishing 2017
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK4001 Applications of electric power
Online Access:	http://irep.iium.edu.my/63086/ http://irep.iium.edu.my/63086/ http://irep.iium.edu.my/63086/ http://irep.iium.edu.my/63086/2/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_scopus.pdf http://irep.iium.edu.my/63086/13/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_MYRA.pdf http://irep.iium.edu.my/63086/19/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal.pdf

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spelling	iium-630862018-06-21T02:46:41Z http://irep.iium.edu.my/63086/ The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode Ganiyev, Sabuhi Khairi, Mohammad Azim Ahmad Fauzi, Dhiyauddin Abdullah, Yusof Hasbullah, Nurul Fadzlin TK Electrical engineering. Electronics Nuclear engineering TK4001 Applications of electric power In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Φb, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. © 2017, Pleiades Publishing, Ltd. Maik Nauka-Interperiodica Publishing 2017-12-08 Article PeerReviewed application/pdf en http://irep.iium.edu.my/63086/2/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_scopus.pdf application/pdf en http://irep.iium.edu.my/63086/13/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_MYRA.pdf application/pdf en http://irep.iium.edu.my/63086/19/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal.pdf Ganiyev, Sabuhi and Khairi, Mohammad Azim and Ahmad Fauzi, Dhiyauddin and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2017) The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode. Semiconductors, 51 (12). pp. 1666-1670. ISSN 1063-7826 https://link.springer.com/article/10.1134/S1063782617120077 10.1134/S1063782617120077
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English English
topic	TK Electrical engineering. Electronics Nuclear engineering TK4001 Applications of electric power
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering TK4001 Applications of electric power Ganiyev, Sabuhi Khairi, Mohammad Azim Ahmad Fauzi, Dhiyauddin Abdullah, Yusof Hasbullah, Nurul Fadzlin The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode
description	In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Φb, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. © 2017, Pleiades Publishing, Ltd.
format	Article
author	Ganiyev, Sabuhi Khairi, Mohammad Azim Ahmad Fauzi, Dhiyauddin Abdullah, Yusof Hasbullah, Nurul Fadzlin
author_facet	Ganiyev, Sabuhi Khairi, Mohammad Azim Ahmad Fauzi, Dhiyauddin Abdullah, Yusof Hasbullah, Nurul Fadzlin
author_sort	Ganiyev, Sabuhi
title	The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode
title_short	The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode
title_full	The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode
title_fullStr	The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode
title_full_unstemmed	The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode
title_sort	effects of electron irradiation and thermal dependence measurements on 4h-sic schottky diode
publisher	Maik Nauka-Interperiodica Publishing
publishDate	2017
url	http://irep.iium.edu.my/63086/ http://irep.iium.edu.my/63086/ http://irep.iium.edu.my/63086/ http://irep.iium.edu.my/63086/2/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_scopus.pdf http://irep.iium.edu.my/63086/13/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_MYRA.pdf http://irep.iium.edu.my/63086/19/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal.pdf
first_indexed	2023-09-18T21:29:29Z
last_indexed	2023-09-18T21:29:29Z
_version_	1777412414500765696

The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

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