The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode
In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forwa...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English English English |
| Published: |
Maik Nauka-Interperiodica Publishing
2017
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/63086/ http://irep.iium.edu.my/63086/ http://irep.iium.edu.my/63086/ http://irep.iium.edu.my/63086/2/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_scopus.pdf http://irep.iium.edu.my/63086/13/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_MYRA.pdf http://irep.iium.edu.my/63086/19/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal.pdf |