A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch

This paper presents a novel design, optimization and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The design incorporates a novel membrane and beams’ structure with two short high-impedance transmission-line (T-line) sections added on either side of the s...

Full description

Bibliographic Details
Main Authors:	Ma, Li Ya, Nordin, Anis Nurashikin, Soin, Norhayati
Format:	Article
Language:	English English English
Published:	Springer Verlag 2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/63942/ http://irep.iium.edu.my/63942/ http://irep.iium.edu.my/63942/ http://irep.iium.edu.my/63942/1/63942_A%20novel%20design%20of%20a%20low-voltage%20low-loss%20T-match%20RF-MEMS_article.pdf http://irep.iium.edu.my/63942/2/63942_A%20novel%20design%20of%20a%20low-voltage%20low-loss%20T-match%20RF-MEMS_scopus.pdf http://irep.iium.edu.my/63942/13/63942_A%20novel%20design%20of%20a%20low-voltage%20low-loss%20T-match%20RF-MEMS%20capacitive%20switch_WOS.pdf

id	iium-63942
recordtype	eprints
spelling	iium-639422019-01-24T01:34:38Z http://irep.iium.edu.my/63942/ A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch Ma, Li Ya Nordin, Anis Nurashikin Soin, Norhayati TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices This paper presents a novel design, optimization and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The design incorporates a novel membrane and beams’ structure with two short high-impedance transmission-line (T-line) sections added on either side of the switch (namely T-match switch) to improve its RF performance, while maintaining low-actuation voltage. The short high-impedance T-line section has narrower width and higher impedance than the coplanar waveguide (CPW)’s signal line, behaves as series inductor to compensate the switch’s up-state capacitance and provides excellent matching at the design frequency. This high-impedance T-line section was designed, simulated and optimized using finite-element-modelling (FEM) tool of electromagnetic (EM) simulator of AWR Design EnvironmentTM. The optimized T-line section’s width and length is 10 µm and 70 µm, respectively. The RF-MEMS switch is actuated by electrostatic force with low-actuation voltage of 2.9 V, has maximum von Mises stress of 13.208 MPa which is less than aluminium’s yield stress and can be operated in robust conditions. Compared to the normal capacitive RF-MEMS switch, this T-match capacitive RF-MEMS switch with two sections of optimized high-impedance T line has improved the performance of return loss and insertion loss, at switch-on state, by 45.83% and 55.35%, respectively; while at the switch-off state, the isolation is increased by 24.05%; only the switch-off return loss is degraded by 11.7% but the value (− 0.5519 dB) is still located in the range of design specifications. The RF-MEMS switch’s actuation time was simulated to be ~ 27 µs with amplitude of 5 V up-step voltage. Springer Verlag 2018-01-01 Article NonPeerReviewed application/pdf en http://irep.iium.edu.my/63942/1/63942_A%20novel%20design%20of%20a%20low-voltage%20low-loss%20T-match%20RF-MEMS_article.pdf application/pdf en http://irep.iium.edu.my/63942/2/63942_A%20novel%20design%20of%20a%20low-voltage%20low-loss%20T-match%20RF-MEMS_scopus.pdf application/pdf en http://irep.iium.edu.my/63942/13/63942_A%20novel%20design%20of%20a%20low-voltage%20low-loss%20T-match%20RF-MEMS%20capacitive%20switch_WOS.pdf Ma, Li Ya and Nordin, Anis Nurashikin and Soin, Norhayati (2018) A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch. Microsystem Technologies, 24 (1). pp. 561-574. ISSN 0946-7076 (In Press) https://link.springer.com/article/10.1007%2Fs00542-017-3577-4 10.1007/s00542-017-3577-4
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English English
topic	TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ma, Li Ya Nordin, Anis Nurashikin Soin, Norhayati A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch
description	This paper presents a novel design, optimization and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The design incorporates a novel membrane and beams’ structure with two short high-impedance transmission-line (T-line) sections added on either side of the switch (namely T-match switch) to improve its RF performance, while maintaining low-actuation voltage. The short high-impedance T-line section has narrower width and higher impedance than the coplanar waveguide (CPW)’s signal line, behaves as series inductor to compensate the switch’s up-state capacitance and provides excellent matching at the design frequency. This high-impedance T-line section was designed, simulated and optimized using finite-element-modelling (FEM) tool of electromagnetic (EM) simulator of AWR Design EnvironmentTM. The optimized T-line section’s width and length is 10 µm and 70 µm, respectively. The RF-MEMS switch is actuated by electrostatic force with low-actuation voltage of 2.9 V, has maximum von Mises stress of 13.208 MPa which is less than aluminium’s yield stress and can be operated in robust conditions. Compared to the normal capacitive RF-MEMS switch, this T-match capacitive RF-MEMS switch with two sections of optimized high-impedance T line has improved the performance of return loss and insertion loss, at switch-on state, by 45.83% and 55.35%, respectively; while at the switch-off state, the isolation is increased by 24.05%; only the switch-off return loss is degraded by 11.7% but the value (− 0.5519 dB) is still located in the range of design specifications. The RF-MEMS switch’s actuation time was simulated to be ~ 27 µs with amplitude of 5 V up-step voltage.
format	Article
author	Ma, Li Ya Nordin, Anis Nurashikin Soin, Norhayati
author_facet	Ma, Li Ya Nordin, Anis Nurashikin Soin, Norhayati
author_sort	Ma, Li Ya
title	A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch
title_short	A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch
title_full	A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch
title_fullStr	A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch
title_full_unstemmed	A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch
title_sort	novel design of a low-voltage low-loss t-match rf-mems capacitive switch
publisher	Springer Verlag
publishDate	2018
url	http://irep.iium.edu.my/63942/ http://irep.iium.edu.my/63942/ http://irep.iium.edu.my/63942/ http://irep.iium.edu.my/63942/1/63942_A%20novel%20design%20of%20a%20low-voltage%20low-loss%20T-match%20RF-MEMS_article.pdf http://irep.iium.edu.my/63942/2/63942_A%20novel%20design%20of%20a%20low-voltage%20low-loss%20T-match%20RF-MEMS_scopus.pdf http://irep.iium.edu.my/63942/13/63942_A%20novel%20design%20of%20a%20low-voltage%20low-loss%20T-match%20RF-MEMS%20capacitive%20switch_WOS.pdf
first_indexed	2023-09-18T21:30:42Z
last_indexed	2023-09-18T21:30:42Z
_version_	1777412490823467008

A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch

Similar Items