Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch bet...

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Main Authors: Tanasta, Z., Muhamad, Pauziah, Kuwano, Noriyuki, Mohd Yatim, Norfazrina Hayati, Unuh, Mohd Hishamuddin
Format: Conference or Workshop Item
Language:English
English
Published: Institute of Physics Publishing 2018
Subjects:
Online Access:http://irep.iium.edu.my/65199/
http://irep.iium.edu.my/65199/
http://irep.iium.edu.my/65199/
http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf
http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf
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recordtype eprints
spelling iium-651992018-07-26T09:25:16Z http://irep.iium.edu.my/65199/ Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment Tanasta, Z. Muhamad, Pauziah Kuwano, Noriyuki Mohd Yatim, Norfazrina Hayati Unuh, Mohd Hishamuddin TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 ℃. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem. Institute of Physics Publishing 2018-03-16 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf application/pdf en http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf Tanasta, Z. and Muhamad, Pauziah and Kuwano, Noriyuki and Mohd Yatim, Norfazrina Hayati and Unuh, Mohd Hishamuddin (2018) Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment. In: 3rd International Conference on Mechanical, Manufacturing and Process Plant Engineering 2017, ICMMPE 2017, 22nd–23rd November 2017, Parkroyal HotelBatu Ferringhi, Penang; Malaysia. http://iopscience.iop.org/article/10.1088/1757-899X/328/1/012019/pdf 10.1088/1757-899X/328/1/012019
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
English
topic TA Engineering (General). Civil engineering (General)
TJ Mechanical engineering and machinery
spellingShingle TA Engineering (General). Civil engineering (General)
TJ Mechanical engineering and machinery
Tanasta, Z.
Muhamad, Pauziah
Kuwano, Noriyuki
Mohd Yatim, Norfazrina Hayati
Unuh, Mohd Hishamuddin
Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
description Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 ℃. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.
format Conference or Workshop Item
author Tanasta, Z.
Muhamad, Pauziah
Kuwano, Noriyuki
Mohd Yatim, Norfazrina Hayati
Unuh, Mohd Hishamuddin
author_facet Tanasta, Z.
Muhamad, Pauziah
Kuwano, Noriyuki
Mohd Yatim, Norfazrina Hayati
Unuh, Mohd Hishamuddin
author_sort Tanasta, Z.
title Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_short Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_full Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_fullStr Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_full_unstemmed Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_sort reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
publisher Institute of Physics Publishing
publishDate 2018
url http://irep.iium.edu.my/65199/
http://irep.iium.edu.my/65199/
http://irep.iium.edu.my/65199/
http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf
http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf
first_indexed 2023-09-18T21:32:30Z
last_indexed 2023-09-18T21:32:30Z
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