Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies

The widely used CMOS Active Pixel Sensors (APS) in space imaging mission are vulnerable to radiations known as Single Event Transient (SET). This paper focus on 3T and 4T CMOS APS with technology from 130 nm scaling down to 32 nm, simulated using various Linear Energy Transfer (LET) magnitudes rangi...

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Main Authors:	Ahamad Sukor, Masturah, Hedzir, Anati Syahira, Sabri, Sharizal Fadlie, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English
Published:	Taylor & Francis Group 2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/72558/ http://irep.iium.edu.my/72558/ http://irep.iium.edu.my/72558/ http://irep.iium.edu.my/72558/1/Single%20event%20transient%20effects%20on%203T%20and%204T%20CMOS%20active%20pixel%20sensors%20for%20different%20technologies.pdf http://irep.iium.edu.my/72558/7/72558_Single%20event%20transient%20effects_scopus.pdf

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spelling	iium-725582019-08-05T06:17:11Z http://irep.iium.edu.my/72558/ Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies Ahamad Sukor, Masturah Hedzir, Anati Syahira Sabri, Sharizal Fadlie Hasbullah, Nurul Fadzlin TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices The widely used CMOS Active Pixel Sensors (APS) in space imaging mission are vulnerable to radiations known as Single Event Transient (SET). This paper focus on 3T and 4T CMOS APS with technology from 130 nm scaling down to 32 nm, simulated using various Linear Energy Transfer (LET) magnitudes ranging from 3.3 to 67.7 MeV.cm2/mg. Larger transient currents were observed at higher LET for both APS architectures. The peak drain current of 3T increases with slightly steeper slope by roughly 8% than 4T due to the difficulty of electron transfer in 4T. In 3T, 130 nm, 90 nm, 65 nm and 45 nm override the 32 nm technology by 13.93%, 9.09%, 4.43% and 2.06%, respectively. The total charge collection of the 3T is constantly higher than the 4T APS by the ratio of at least 1.25 indicates 4T has a higher radiation hardness. A bright spot degradation is expected to occur in the image if the transient signal is more than 20% of the original signal which mainly attributed to the lower operating voltage and smaller nodal capacitance. From this study, 4T CMOS APS shown more radiation hardness than the 3T CMOS APS and 32 nm technology exhibits lowest radiation-tolerant. Taylor & Francis Group 2019-06-10 Article PeerReviewed application/pdf en http://irep.iium.edu.my/72558/1/Single%20event%20transient%20effects%20on%203T%20and%204T%20CMOS%20active%20pixel%20sensors%20for%20different%20technologies.pdf application/pdf en http://irep.iium.edu.my/72558/7/72558_Single%20event%20transient%20effects_scopus.pdf Ahamad Sukor, Masturah and Hedzir, Anati Syahira and Sabri, Sharizal Fadlie and Hasbullah, Nurul Fadzlin (2019) Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies. Australian Journal of Electrical and Electronics Engineering. pp. 1-10. ISSN 1448-837X E-ISSN 2205-362X (In Press) https://www.tandfonline.com/doi/abs/10.1080/1448837X.2019.1624245?journalCode=tele20 https://doi.org/10.1080/1448837X.2019.1624245
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ahamad Sukor, Masturah Hedzir, Anati Syahira Sabri, Sharizal Fadlie Hasbullah, Nurul Fadzlin Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies
description	The widely used CMOS Active Pixel Sensors (APS) in space imaging mission are vulnerable to radiations known as Single Event Transient (SET). This paper focus on 3T and 4T CMOS APS with technology from 130 nm scaling down to 32 nm, simulated using various Linear Energy Transfer (LET) magnitudes ranging from 3.3 to 67.7 MeV.cm2/mg. Larger transient currents were observed at higher LET for both APS architectures. The peak drain current of 3T increases with slightly steeper slope by roughly 8% than 4T due to the difficulty of electron transfer in 4T. In 3T, 130 nm, 90 nm, 65 nm and 45 nm override the 32 nm technology by 13.93%, 9.09%, 4.43% and 2.06%, respectively. The total charge collection of the 3T is constantly higher than the 4T APS by the ratio of at least 1.25 indicates 4T has a higher radiation hardness. A bright spot degradation is expected to occur in the image if the transient signal is more than 20% of the original signal which mainly attributed to the lower operating voltage and smaller nodal capacitance. From this study, 4T CMOS APS shown more radiation hardness than the 3T CMOS APS and 32 nm technology exhibits lowest radiation-tolerant.
format	Article
author	Ahamad Sukor, Masturah Hedzir, Anati Syahira Sabri, Sharizal Fadlie Hasbullah, Nurul Fadzlin
author_facet	Ahamad Sukor, Masturah Hedzir, Anati Syahira Sabri, Sharizal Fadlie Hasbullah, Nurul Fadzlin
author_sort	Ahamad Sukor, Masturah
title	Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies
title_short	Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies
title_full	Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies
title_fullStr	Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies
title_full_unstemmed	Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies
title_sort	single event transient effects on 3t and 4t cmos active pixel sensors for different technologies
publisher	Taylor & Francis Group
publishDate	2019
url	http://irep.iium.edu.my/72558/ http://irep.iium.edu.my/72558/ http://irep.iium.edu.my/72558/ http://irep.iium.edu.my/72558/1/Single%20event%20transient%20effects%20on%203T%20and%204T%20CMOS%20active%20pixel%20sensors%20for%20different%20technologies.pdf http://irep.iium.edu.my/72558/7/72558_Single%20event%20transient%20effects_scopus.pdf
first_indexed	2023-09-18T21:42:48Z
last_indexed	2023-09-18T21:42:48Z
_version_	1777413252355981312

Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies

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