APA (7th ed.) Citation

Mohd Khairi, M. A., Abdullah, Y., Ab Rahim, R., & Hasbullah, N. F. (2019). Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons. The Institution of Engineering and Technology (IET).

Chicago Style (17th ed.) Citation

Mohd Khairi, Mohamad Azim, Yusof Abdullah, Rosminazuin Ab Rahim, and Nurul Fadzlin Hasbullah. Durability of 4H-SiC Schottky Power Diodes Irradiated with High-energy Bombarding Electrons. The Institution of Engineering and Technology (IET), 2019.

MLA (8th ed.) Citation

Mohd Khairi, Mohamad Azim, et al. Durability of 4H-SiC Schottky Power Diodes Irradiated with High-energy Bombarding Electrons. The Institution of Engineering and Technology (IET), 2019.