Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature
Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications Ltd., Switzerland
2011
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/8577/ http://irep.iium.edu.my/8577/ http://irep.iium.edu.my/8577/ http://irep.iium.edu.my/8577/1/AGUS_-_Applied_Mechanics_and_Materials_2011_-_Nanofabrication.pdf |
| Summary: | Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A low temperature (-70oC) operation of an atomic force microscope (AFM) was used to condense ambient humidity (40%) to perform a thin frozen water layer covering a silicon wafer surface. A scanning probe was contacted with the layer and a zero bias voltage was applied to the sample surface with the AFM probe tip connected to the reference -2.44V. The frozen water
film acted both as an electrolyte to form silicon dioxide and as a resource of hydroxide. Using this technique (a) a consistency in height of 6 nm silicon dioxide patterns layer could be achieved showing that the effect of tip vibration could be reduced; (b) easy to remove frozen water by just operating the AFM to the ambient temperature; (c) it is possible to control thickness by making different humidity. |
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