Dark Current mechanisms in quantum dot laser structures
Current-voltage measurements have been performed on InAs/InGaAs/GaAs quantum dot structures with varying growth and design parameters. These measurements show that the forward and reverse bias dark currents decrease with increasing spacer growth temperature, however, they are relatively insensitive...
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American Institute of Physics
2011
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| Online Access: | http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/1/Dark_Current_Mechanism.pdf |
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iium-98162012-05-24T14:27:50Z http://irep.iium.edu.my/9816/ Dark Current mechanisms in quantum dot laser structures Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. TK7885 Computer engineering Current-voltage measurements have been performed on InAs/InGaAs/GaAs quantum dot structures with varying growth and design parameters. These measurements show that the forward and reverse bias dark currents decrease with increasing spacer growth temperature, however, they are relatively insensitive to the number of periods of the quantum dot layers. Temperature dependent current-voltage measurements show that the mechanism that governs the reverse bias leakage current is due to generation-recombination via mid-band traps assisted by the Frenkel-Poole emission of carriers from these traps. American Institute of Physics 2011 Article PeerReviewed application/pdf en http://irep.iium.edu.my/9816/1/Dark_Current_Mechanism.pdf Hasbullah, Nurul Fadzlin and David, J. P. R. and Mowbray, D. J. (2011) Dark Current mechanisms in quantum dot laser structures. Journal of Applied Physics, 109 (11). pp. 113111-1. ISSN 0021-8979 http://jap.aip.org/resource/1/japiau/v109/i11/p113111_s1?isAuthorized=no DOI: 10.1063/1.3596524 |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
International Islamic University Malaysia |
| building |
IIUM Repository |
| collection |
Online Access |
| language |
English |
| topic |
TK7885 Computer engineering |
| spellingShingle |
TK7885 Computer engineering Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. Dark Current mechanisms in quantum dot laser structures |
| description |
Current-voltage measurements have been performed on InAs/InGaAs/GaAs quantum dot structures with varying growth and design parameters. These measurements show that the forward and reverse bias dark currents decrease with increasing spacer growth temperature, however, they are relatively insensitive to the number of periods of the quantum dot layers. Temperature dependent current-voltage measurements show that the mechanism that governs the reverse bias leakage current is due to generation-recombination via mid-band traps assisted by the Frenkel-Poole emission of carriers from these traps. |
| format |
Article |
| author |
Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. |
| author_facet |
Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. |
| author_sort |
Hasbullah, Nurul Fadzlin |
| title |
Dark Current mechanisms in quantum dot laser structures |
| title_short |
Dark Current mechanisms in quantum dot laser structures |
| title_full |
Dark Current mechanisms in quantum dot laser structures |
| title_fullStr |
Dark Current mechanisms in quantum dot laser structures |
| title_full_unstemmed |
Dark Current mechanisms in quantum dot laser structures |
| title_sort |
dark current mechanisms in quantum dot laser structures |
| publisher |
American Institute of Physics |
| publishDate |
2011 |
| url |
http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/ http://irep.iium.edu.my/9816/1/Dark_Current_Mechanism.pdf |
| first_indexed |
2023-09-18T20:19:26Z |
| last_indexed |
2023-09-18T20:19:26Z |
| _version_ |
1777408007412383744 |