Enhanced dielectric properties of filled PVDF/MgO polymer nanocomposite / Adillah Nurashikin Arshad

PVDF and PVDF/MgO nanocomposite thin films (MgO loading percentages 1, 3, 5, 7, 9 and 11 .wt%) were produced by spin coating on Al-glass substrates at 1500rpm. PVDF thin films were annealed subsequently at 70°C, 90°C, 110°C, 130°C, 150°C and 170°C, and then were cooled by fast cooling (FC) and slow...

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Main Author: Arshad, Adillah Nurashikin
Format: Thesis
Language:English
Published: 2015
Online Access:http://ir.uitm.edu.my/id/eprint/17798/
http://ir.uitm.edu.my/id/eprint/17798/2/TM_ADILLAH%20NURASHIKIN%20ARSHAD%20AS%2015_5.pdf
id uitm-17798
recordtype eprints
spelling uitm-177982018-10-18T03:17:49Z http://ir.uitm.edu.my/id/eprint/17798/ Enhanced dielectric properties of filled PVDF/MgO polymer nanocomposite / Adillah Nurashikin Arshad Arshad, Adillah Nurashikin PVDF and PVDF/MgO nanocomposite thin films (MgO loading percentages 1, 3, 5, 7, 9 and 11 .wt%) were produced by spin coating on Al-glass substrates at 1500rpm. PVDF thin films were annealed subsequently at 70°C, 90°C, 110°C, 130°C, 150°C and 170°C, and then were cooled by fast cooling (FC) and slow cooling (SC). PVDF thin films annealed at 70°C with SC resulted an increment in the dielectric constant from 10 (UNPVDF) to 14 at 1 kHz frequency with low tangent loss of 0.05 (UN-PVDF = 0.1). An increased in the resistivity value of 3.2x10⁴ Ω.cm (UN-PVDF = 2.0x10⁴ Ω.cm) was also observed. Upon incorporation of MgO nano-filler, PVDF/MgO(7%) nanocomposite thin film showed highest dielectric constant of 22 at similar frequency compared to UN-PVDF (10), with low dielectric loss (ɛ"= 0.08), as well as an increase in resistivity value in comparison to PVDF/MgO film of 1, 3, 5, 9 and 11 wt% MgO loading. Most importantly, PVDF/MgO(7%) nanocomposite thin film was found to be free from defects such as voids as evident from FE-SEM images of the films. The broad significant bonding peaks at 840 and 880 cm¯¹ as observed from the FTIR spectrum were representations of the - CH₂ and -CF₂ groups of PVDF film with an indication of high content of P-phase crystals, which contributed to an increment in the dielectric constant of PVDF/MgO(7%) nanocomposite thin films. Hence, by utilizing this two parameters, PVDF/MgO(7%) nanocomposite thin films and then annealed at 70°C with SC, resulted in the highest dielectric constant value of 27 for this study, with small increased in tangent loss of 0.13 at 1 kHz frequency. Resistivity value of annealed PVDF/MgO(7%) was also observed to increase (10.5x10⁴ Ω.cm). Thus, it was concluded that PVDF/MgO(7%) annealed at 70°C, and then cooled slow cooling was the optimized parameter conditions required for producing high dielectrics properties of PVDF nanocomposite thin films. 2015 Thesis NonPeerReviewed text en http://ir.uitm.edu.my/id/eprint/17798/2/TM_ADILLAH%20NURASHIKIN%20ARSHAD%20AS%2015_5.pdf Arshad, Adillah Nurashikin (2015) Enhanced dielectric properties of filled PVDF/MgO polymer nanocomposite / Adillah Nurashikin Arshad. Masters thesis, Universiti Teknologi MARA.
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collection Online Access
language English
description PVDF and PVDF/MgO nanocomposite thin films (MgO loading percentages 1, 3, 5, 7, 9 and 11 .wt%) were produced by spin coating on Al-glass substrates at 1500rpm. PVDF thin films were annealed subsequently at 70°C, 90°C, 110°C, 130°C, 150°C and 170°C, and then were cooled by fast cooling (FC) and slow cooling (SC). PVDF thin films annealed at 70°C with SC resulted an increment in the dielectric constant from 10 (UNPVDF) to 14 at 1 kHz frequency with low tangent loss of 0.05 (UN-PVDF = 0.1). An increased in the resistivity value of 3.2x10⁴ Ω.cm (UN-PVDF = 2.0x10⁴ Ω.cm) was also observed. Upon incorporation of MgO nano-filler, PVDF/MgO(7%) nanocomposite thin film showed highest dielectric constant of 22 at similar frequency compared to UN-PVDF (10), with low dielectric loss (ɛ"= 0.08), as well as an increase in resistivity value in comparison to PVDF/MgO film of 1, 3, 5, 9 and 11 wt% MgO loading. Most importantly, PVDF/MgO(7%) nanocomposite thin film was found to be free from defects such as voids as evident from FE-SEM images of the films. The broad significant bonding peaks at 840 and 880 cm¯¹ as observed from the FTIR spectrum were representations of the - CH₂ and -CF₂ groups of PVDF film with an indication of high content of P-phase crystals, which contributed to an increment in the dielectric constant of PVDF/MgO(7%) nanocomposite thin films. Hence, by utilizing this two parameters, PVDF/MgO(7%) nanocomposite thin films and then annealed at 70°C with SC, resulted in the highest dielectric constant value of 27 for this study, with small increased in tangent loss of 0.13 at 1 kHz frequency. Resistivity value of annealed PVDF/MgO(7%) was also observed to increase (10.5x10⁴ Ω.cm). Thus, it was concluded that PVDF/MgO(7%) annealed at 70°C, and then cooled slow cooling was the optimized parameter conditions required for producing high dielectrics properties of PVDF nanocomposite thin films.
format Thesis
author Arshad, Adillah Nurashikin
spellingShingle Arshad, Adillah Nurashikin
Enhanced dielectric properties of filled PVDF/MgO polymer nanocomposite / Adillah Nurashikin Arshad
author_facet Arshad, Adillah Nurashikin
author_sort Arshad, Adillah Nurashikin
title Enhanced dielectric properties of filled PVDF/MgO polymer nanocomposite / Adillah Nurashikin Arshad
title_short Enhanced dielectric properties of filled PVDF/MgO polymer nanocomposite / Adillah Nurashikin Arshad
title_full Enhanced dielectric properties of filled PVDF/MgO polymer nanocomposite / Adillah Nurashikin Arshad
title_fullStr Enhanced dielectric properties of filled PVDF/MgO polymer nanocomposite / Adillah Nurashikin Arshad
title_full_unstemmed Enhanced dielectric properties of filled PVDF/MgO polymer nanocomposite / Adillah Nurashikin Arshad
title_sort enhanced dielectric properties of filled pvdf/mgo polymer nanocomposite / adillah nurashikin arshad
publishDate 2015
url http://ir.uitm.edu.my/id/eprint/17798/
http://ir.uitm.edu.my/id/eprint/17798/2/TM_ADILLAH%20NURASHIKIN%20ARSHAD%20AS%2015_5.pdf
first_indexed 2023-09-18T22:59:05Z
last_indexed 2023-09-18T22:59:05Z
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