Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan

Studies on the growth of nanocrystalline silicon (nc-Si) on teflon substrate are being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposi...

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Main Author:	Hikmee Mahzan, Norhidayatul
Format:	Thesis
Language:	English
Published:	2015
Online Access:	http://ir.uitm.edu.my/id/eprint/18430/ http://ir.uitm.edu.my/id/eprint/18430/2/TM_NORHIDAYATUL%20HIKMEE%20MAHZAN%20EE%2015_5.pdf

id	uitm-18430
recordtype	eprints
spelling	uitm-184302019-02-20T03:01:51Z http://ir.uitm.edu.my/id/eprint/18430/ Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan Hikmee Mahzan, Norhidayatul Studies on the growth of nanocrystalline silicon (nc-Si) on teflon substrate are being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power, deposition temperature, sputtering pressure and argon gas flow rate. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that at room temperature, the deposited thin film was amorphous, however, crystallization started to occur when the substrate was heated, resulting that the deposited thin fdms are nc-Si thin films. The film thickness and the deposition rate increased with a substrate temperature except for the room temperature deposition. The grains seemed to be more dense for the deposition at higher temperature compared to the lower temperature. We also found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results is shown that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and teflon substrate. From optimization result, the nc-Si thin films deposited at RF power 200 W, deposition temperatures 150 °C, sputtering pressure 7 mTorr and 40 seem Ar gas flow rate, which gives the highest crystallinity based on Raman shift results compared to others thin films. In this thesis we also studied on the resistive switching on the nc-Si sub-oxide for memristive device applications. 2015 Thesis NonPeerReviewed text en http://ir.uitm.edu.my/id/eprint/18430/2/TM_NORHIDAYATUL%20HIKMEE%20MAHZAN%20EE%2015_5.pdf Hikmee Mahzan, Norhidayatul (2015) Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan. Masters thesis, Universiti Teknologi MARA.
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Teknologi MARA
building	UiTM Institutional Repository
collection	Online Access
language	English
description	Studies on the growth of nanocrystalline silicon (nc-Si) on teflon substrate are being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power, deposition temperature, sputtering pressure and argon gas flow rate. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that at room temperature, the deposited thin film was amorphous, however, crystallization started to occur when the substrate was heated, resulting that the deposited thin fdms are nc-Si thin films. The film thickness and the deposition rate increased with a substrate temperature except for the room temperature deposition. The grains seemed to be more dense for the deposition at higher temperature compared to the lower temperature. We also found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results is shown that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and teflon substrate. From optimization result, the nc-Si thin films deposited at RF power 200 W, deposition temperatures 150 °C, sputtering pressure 7 mTorr and 40 seem Ar gas flow rate, which gives the highest crystallinity based on Raman shift results compared to others thin films. In this thesis we also studied on the resistive switching on the nc-Si sub-oxide for memristive device applications.
format	Thesis
author	Hikmee Mahzan, Norhidayatul
spellingShingle	Hikmee Mahzan, Norhidayatul Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
author_facet	Hikmee Mahzan, Norhidayatul
author_sort	Hikmee Mahzan, Norhidayatul
title	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_short	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_full	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_fullStr	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_full_unstemmed	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_sort	synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by rf magnetron sputtering / norhidayatul hikmee mahzan
publishDate	2015
url	http://ir.uitm.edu.my/id/eprint/18430/ http://ir.uitm.edu.my/id/eprint/18430/2/TM_NORHIDAYATUL%20HIKMEE%20MAHZAN%20EE%2015_5.pdf
first_indexed	2023-09-18T23:00:30Z
last_indexed	2023-09-18T23:00:30Z
_version_	1777418141258743808

Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan

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