Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman

Zinc Oxide (ZnO) based varistor are widely used as circuit protective devices by literally absorbs the dangerous surge and spikes or grounding this unwanted magnitude. In this research, the effect of silica (SiO2) doping on the microstructure and electrical properties of ZnO base varistor has bee...

Full description

Bibliographic Details
Main Author:	Osman, Nordiana
Format:	Student Project
Language:	English
Published:	Faculty of Applied Sciences 2017
Subjects:	Inorganic chemistry
Online Access:	http://ir.uitm.edu.my/id/eprint/23776/ http://ir.uitm.edu.my/id/eprint/23776/1/PPb_NORDIANA%20OSMAN%20AS%20C%2017_5.PDF

id	uitm-23776
recordtype	eprints
spelling	uitm-237762019-04-09T01:47:20Z http://ir.uitm.edu.my/id/eprint/23776/ Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman Osman, Nordiana Inorganic chemistry Zinc Oxide (ZnO) based varistor are widely used as circuit protective devices by literally absorbs the dangerous surge and spikes or grounding this unwanted magnitude. In this research, the effect of silica (SiO2) doping on the microstructure and electrical properties of ZnO base varistor has been investigated. The sample undoped ZnO and 1 wt.%, 3 wt.%, 5 wt.% and 7 wt.% SiO2 doped ZnO were prepared by using solid state method. The sample have been characterized via X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), densification and electrical measurement. All the XRD diffraction peak was shows the presence of dominant ZnO phase with hexagonal wurtzite structure. The SEM results show that the average grain size of undoped ZnO was low compared to SiO2 doped ZnO. The average grain size increased with the increases of SiO2 dopant and the structural of 5 wt.% of SiO2 was more homogeneous and uniformly distributed. The value of nonlinear coefficient (a) was obtained from the analysis of I-V curve. The a value of undoped ZnO sample is low compared to SiO2 doped ZnO. The a value is increased as the content of Si02increases. The maximum value of α is at 5 wt.% of SiO2 doped ZnO which is 2.040 and might be enhanced the performance of varistor. Faculty of Applied Sciences 2017 Student Project NonPeerReviewed text en http://ir.uitm.edu.my/id/eprint/23776/1/PPb_NORDIANA%20OSMAN%20AS%20C%2017_5.PDF Osman, Nordiana (2017) Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman. [Student Project] (Unpublished)
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Teknologi MARA
building	UiTM Institutional Repository
collection	Online Access
language	English
topic	Inorganic chemistry
spellingShingle	Inorganic chemistry Osman, Nordiana Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman
description	Zinc Oxide (ZnO) based varistor are widely used as circuit protective devices by literally absorbs the dangerous surge and spikes or grounding this unwanted magnitude. In this research, the effect of silica (SiO2) doping on the microstructure and electrical properties of ZnO base varistor has been investigated. The sample undoped ZnO and 1 wt.%, 3 wt.%, 5 wt.% and 7 wt.% SiO2 doped ZnO were prepared by using solid state method. The sample have been characterized via X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), densification and electrical measurement. All the XRD diffraction peak was shows the presence of dominant ZnO phase with hexagonal wurtzite structure. The SEM results show that the average grain size of undoped ZnO was low compared to SiO2 doped ZnO. The average grain size increased with the increases of SiO2 dopant and the structural of 5 wt.% of SiO2 was more homogeneous and uniformly distributed. The value of nonlinear coefficient (a) was obtained from the analysis of I-V curve. The a value of undoped ZnO sample is low compared to SiO2 doped ZnO. The a value is increased as the content of Si02increases. The maximum value of α is at 5 wt.% of SiO2 doped ZnO which is 2.040 and might be enhanced the performance of varistor.
format	Student Project
author	Osman, Nordiana
author_facet	Osman, Nordiana
author_sort	Osman, Nordiana
title	Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman
title_short	Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman
title_full	Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman
title_fullStr	Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman
title_full_unstemmed	Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman
title_sort	effect of silica doped zinc oxide based varistor on structural and electrical properties / nordiana osman
publisher	Faculty of Applied Sciences
publishDate	2017
url	http://ir.uitm.edu.my/id/eprint/23776/ http://ir.uitm.edu.my/id/eprint/23776/1/PPb_NORDIANA%20OSMAN%20AS%20C%2017_5.PDF
first_indexed	2023-09-18T23:11:22Z
last_indexed	2023-09-18T23:11:22Z
_version_	1777418824101920768

Effect of silica doped zinc oxide based varistor on structural and electrical properties / Nordiana Osman

Similar Items