Preparation of PMMA-based semiconductor / Rabaitul Waqiah Zakariya
In this study the Poly (methyl methacrylate) block with 10 mm thickness was irradiated using Electron Beam Accelerator at 50 kGy radiation dose. The energy band gap obtained from this irradiated sample was 3.50 eV which falls in the range of most common semiconductors. From the Hot Probe measure...
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| Format: | Student Project |
| Language: | English |
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Faculty of Applied Sciences
2009
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| Online Access: | http://ir.uitm.edu.my/id/eprint/774/ http://ir.uitm.edu.my/id/eprint/774/1/PPb_RABAITUL%20WAQIAH%20ZAKARIYA%20AS%2009_5%20P01.pdf |
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uitm-7742018-10-24T03:09:05Z http://ir.uitm.edu.my/id/eprint/774/ Preparation of PMMA-based semiconductor / Rabaitul Waqiah Zakariya Zakariya, Rabaitul Waqiah QD Chemistry In this study the Poly (methyl methacrylate) block with 10 mm thickness was irradiated using Electron Beam Accelerator at 50 kGy radiation dose. The energy band gap obtained from this irradiated sample was 3.50 eV which falls in the range of most common semiconductors. From the Hot Probe measurement, it was found that this irradiated PMMA was an n-type semiconductor. Therefore, it can be concluded that the charge carriers in this irradiated PMMA system were electrons. These electrons were released from the breaking of CH2 and CH3 groups of PMMA structure that had been confirmed from the Fourier Transform Infrared analysis (FTIR). The decrease in the glass transition temperature, Tg and the decomposition temperatures, Td of the irradiated PMMA system obtained from the differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA) thermogram supported the occurrence of bond breaking in the structure. This can also be confirmed from the roughness structure obtained in the optical micrograph of the irradiated PMMA. Faculty of Applied Sciences 2009 Student Project NonPeerReviewed text en http://ir.uitm.edu.my/id/eprint/774/1/PPb_RABAITUL%20WAQIAH%20ZAKARIYA%20AS%2009_5%20P01.pdf Zakariya, Rabaitul Waqiah (2009) Preparation of PMMA-based semiconductor / Rabaitul Waqiah Zakariya. [Student Project] (Unpublished) |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
Universiti Teknologi MARA |
| building |
UiTM Institutional Repository |
| collection |
Online Access |
| language |
English |
| topic |
QD Chemistry |
| spellingShingle |
QD Chemistry Zakariya, Rabaitul Waqiah Preparation of PMMA-based semiconductor / Rabaitul Waqiah Zakariya |
| description |
In this study the Poly (methyl methacrylate) block with 10 mm thickness
was irradiated using Electron Beam Accelerator at 50 kGy radiation dose.
The energy band gap obtained from this irradiated sample was 3.50 eV
which falls in the range of most common semiconductors. From the Hot
Probe measurement, it was found that this irradiated PMMA was an n-type
semiconductor. Therefore, it can be concluded that the charge carriers in
this irradiated PMMA system were electrons. These electrons were
released from the breaking of CH2 and CH3 groups of PMMA structure
that had been confirmed from the Fourier Transform Infrared analysis
(FTIR). The decrease in the glass transition temperature, Tg and the
decomposition temperatures, Td of the irradiated PMMA system obtained
from the differential scanning calorimetry (DSC) and thermogravimetric
analysis (TGA) thermogram supported the occurrence of bond breaking in
the structure. This can also be confirmed from the roughness structure
obtained in the optical micrograph of the irradiated PMMA. |
| format |
Student Project |
| author |
Zakariya, Rabaitul Waqiah |
| author_facet |
Zakariya, Rabaitul Waqiah |
| author_sort |
Zakariya, Rabaitul Waqiah |
| title |
Preparation of PMMA-based semiconductor / Rabaitul Waqiah Zakariya |
| title_short |
Preparation of PMMA-based semiconductor / Rabaitul Waqiah Zakariya |
| title_full |
Preparation of PMMA-based semiconductor / Rabaitul Waqiah Zakariya |
| title_fullStr |
Preparation of PMMA-based semiconductor / Rabaitul Waqiah Zakariya |
| title_full_unstemmed |
Preparation of PMMA-based semiconductor / Rabaitul Waqiah Zakariya |
| title_sort |
preparation of pmma-based semiconductor / rabaitul waqiah zakariya |
| publisher |
Faculty of Applied Sciences |
| publishDate |
2009 |
| url |
http://ir.uitm.edu.my/id/eprint/774/ http://ir.uitm.edu.my/id/eprint/774/1/PPb_RABAITUL%20WAQIAH%20ZAKARIYA%20AS%2009_5%20P01.pdf |
| first_indexed |
2023-09-18T22:45:01Z |
| last_indexed |
2023-09-18T22:45:01Z |
| _version_ |
1777417166929264640 |