Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition

The advantage of plasma enhanced chemical vapour deposition (PECVD) method is the ability to deposit thin films at relatively low temperature. Plasma power supports the growth process by decomposing hydrocarbon to carbon radicals which will be deposited later on metal catalyst. In this work, we have...

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Main Authors:	Aishah Khalid, Mohd Ambri Mohamed, Akrajas Ali Umar
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2017
Online Access:	http://journalarticle.ukm.my/11129/ http://journalarticle.ukm.my/11129/ http://journalarticle.ukm.my/11129/1/14%20Aishah%20Khalid.pdf

id	ukm-11129
recordtype	eprints
spelling	ukm-111292017-12-21T04:42:03Z http://journalarticle.ukm.my/11129/ Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition Aishah Khalid, Mohd Ambri Mohamed, Akrajas Ali Umar, The advantage of plasma enhanced chemical vapour deposition (PECVD) method is the ability to deposit thin films at relatively low temperature. Plasma power supports the growth process by decomposing hydrocarbon to carbon radicals which will be deposited later on metal catalyst. In this work, we have successfully synthesis graphene on Ni and Co films at relatively low temperature and optimize the synthesis conditions by adjusting the plasma power. Low temperature growth of graphene was optimized at 600°C after comparing the quality of as-grown graphene at several temperatures from 400 to 800°C and by varying plasma powers in the range of 20 - 100 W. Raman analysis of the as-grown samples showed that graphene prefers lower plasma power of 40 W. The annihilation of graphene formation at higher plasma powers is attributed to the presence of high concentration of hydrogen radical from methane which recombines with carbon elements on thin film surface. The optimum graphene growth conditions were obtained at growth temperature of 600°C, plasma power of 40 W and growth time of 10 min with methane flow rate of 120 sccm. Penerbit Universiti Kebangsaan Malaysia 2017-07 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/11129/1/14%20Aishah%20Khalid.pdf Aishah Khalid, and Mohd Ambri Mohamed, and Akrajas Ali Umar, (2017) Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition. Sains Malaysiana, 46 (7). pp. 1111-1117. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid46bil7_2017/KandunganJilid46Bil7_2017.html
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	The advantage of plasma enhanced chemical vapour deposition (PECVD) method is the ability to deposit thin films at relatively low temperature. Plasma power supports the growth process by decomposing hydrocarbon to carbon radicals which will be deposited later on metal catalyst. In this work, we have successfully synthesis graphene on Ni and Co films at relatively low temperature and optimize the synthesis conditions by adjusting the plasma power. Low temperature growth of graphene was optimized at 600°C after comparing the quality of as-grown graphene at several temperatures from 400 to 800°C and by varying plasma powers in the range of 20 - 100 W. Raman analysis of the as-grown samples showed that graphene prefers lower plasma power of 40 W. The annihilation of graphene formation at higher plasma powers is attributed to the presence of high concentration of hydrogen radical from methane which recombines with carbon elements on thin film surface. The optimum graphene growth conditions were obtained at growth temperature of 600°C, plasma power of 40 W and growth time of 10 min with methane flow rate of 120 sccm.
format	Article
author	Aishah Khalid, Mohd Ambri Mohamed, Akrajas Ali Umar,
spellingShingle	Aishah Khalid, Mohd Ambri Mohamed, Akrajas Ali Umar, Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition
author_facet	Aishah Khalid, Mohd Ambri Mohamed, Akrajas Ali Umar,
author_sort	Aishah Khalid,
title	Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition
title_short	Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition
title_full	Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition
title_fullStr	Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition
title_full_unstemmed	Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition
title_sort	graphene growth at low temperatures using rf-plasma enhanced chemical vapour deposition
publisher	Penerbit Universiti Kebangsaan Malaysia
publishDate	2017
url	http://journalarticle.ukm.my/11129/ http://journalarticle.ukm.my/11129/ http://journalarticle.ukm.my/11129/1/14%20Aishah%20Khalid.pdf
first_indexed	2023-09-18T19:59:27Z
last_indexed	2023-09-18T19:59:27Z
_version_	1777406750418272256

Graphene growth at low temperatures using RF-plasma enhanced chemical vapour deposition

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