Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design

In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) diode structure was used to enhance the device performance. The main objective of this resear...

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Main Authors:	Mohd Rofei Mat Hussin, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, Wong, H.Y., Mukter Zaman
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2017
Online Access:	http://journalarticle.ukm.my/11133/ http://journalarticle.ukm.my/11133/ http://journalarticle.ukm.my/11133/1/18%20Mohd%20Rofei.pdf

id	ukm-11133
recordtype	eprints
spelling	ukm-111332017-12-21T04:31:37Z http://journalarticle.ukm.my/11133/ Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design Mohd Rofei Mat Hussin, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, Wong, H.Y. Mukter Zaman, In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) diode structure was used to enhance the device performance. The main objective of this research was to study the effect of reduced graphene oxide (RGO) deposited on silicon surface for Schottky barrier formation and heat transfer in Schottky junction. The study showed RGO deposited on silicon as a heat spreader could help to reduce the effect of heat generated in the Schottky junction that leads to a leakage current reduction and efficiency improvement in the device. With comparison to the conventional metal silicide (titanium silicide and cobalt silicide), the leakage reduced by two-orders of magnitude when tested under high operating temperature (>100°C). TMBS rectifier diode that uses graphene-based heat spreader could produce highly reliable product able to withstand high temperature operating condition. Penerbit Universiti Kebangsaan Malaysia 2017-07 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/11133/1/18%20Mohd%20Rofei.pdf Mohd Rofei Mat Hussin, and Muhammad Mahyiddin Ramli, and Sharaifah Kamariah Wan Sabli, and Iskhandar Md Nasir, and Mohd Ismahadi Syono, and Wong, H.Y. and Mukter Zaman, (2017) Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design. Sains Malaysiana, 46 (7). pp. 1147-1154. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid46bil7_2017/KandunganJilid46Bil7_2017.html
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) diode structure was used to enhance the device performance. The main objective of this research was to study the effect of reduced graphene oxide (RGO) deposited on silicon surface for Schottky barrier formation and heat transfer in Schottky junction. The study showed RGO deposited on silicon as a heat spreader could help to reduce the effect of heat generated in the Schottky junction that leads to a leakage current reduction and efficiency improvement in the device. With comparison to the conventional metal silicide (titanium silicide and cobalt silicide), the leakage reduced by two-orders of magnitude when tested under high operating temperature (>100°C). TMBS rectifier diode that uses graphene-based heat spreader could produce highly reliable product able to withstand high temperature operating condition.
format	Article
author	Mohd Rofei Mat Hussin, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, Wong, H.Y. Mukter Zaman,
spellingShingle	Mohd Rofei Mat Hussin, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, Wong, H.Y. Mukter Zaman, Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design
author_facet	Mohd Rofei Mat Hussin, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, Wong, H.Y. Mukter Zaman,
author_sort	Mohd Rofei Mat Hussin,
title	Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design
title_short	Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design
title_full	Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design
title_fullStr	Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design
title_full_unstemmed	Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design
title_sort	fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design
publisher	Penerbit Universiti Kebangsaan Malaysia
publishDate	2017
url	http://journalarticle.ukm.my/11133/ http://journalarticle.ukm.my/11133/ http://journalarticle.ukm.my/11133/1/18%20Mohd%20Rofei.pdf
first_indexed	2023-09-18T19:59:28Z
last_indexed	2023-09-18T19:59:28Z
_version_	1777406751017009152

Fabrication and characterization of graphene-on-silicon schottky diode for advanced power electronic design

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