Distribution of ga vacancies in Zn diffused GaAs
A detailed discussion on the distribution and the characteristics of vacancy profiles in Zn diffused GaAs is presented in this paper. Vacancies are consumed during the diffusion process, creating short-fall in the equilibrium vacancy concentration. The crystal tries to recover this short-fall by...
| Main Authors: | , |
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| Format: | Article |
| Published: |
1992
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| Online Access: | http://journalarticle.ukm.my/1300/ http://journalarticle.ukm.my/1300/ |
| Summary: | A detailed discussion on the distribution and the characteristics of vacancy profiles in
Zn diffused GaAs is presented in this paper. Vacancies are consumed during the
diffusion process, creating short-fall in the equilibrium vacancy concentration. The
crystal tries to recover this short-fall by vacancy diffusion and vacancy generation
process. In course of time, the depth in the vacancy short-fall decreases, but this
short-fall propagates deeper into the crystal |
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