Distribution of ga vacancies in Zn diffused GaAs
A detailed discussion on the distribution and the characteristics of vacancy profiles in Zn diffused GaAs is presented in this paper. Vacancies are consumed during the diffusion process, creating short-fall in the equilibrium vacancy concentration. The crystal tries to recover this short-fall by...
Main Authors: | Zahari Mohamed Darus, Iftekhar Ahmed |
---|---|
Format: | Article |
Published: |
1992
|
Online Access: | http://journalarticle.ukm.my/1300/ http://journalarticle.ukm.my/1300/ |
Similar Items
-
Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012) -
Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013) -
An analysis of the electron trajectory in the vicinity of GaAs quantum dot
by: Hanafi Ithnin,, et al.
Published: (2014) -
Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
by: Mahmood, Ahmed, et al.
Published: (2018) -
Optimal nano dimensional channel of GaAs-FinFET transistor
by: Ahmed, Mahmood, et al.
Published: (2018)