Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films

Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In1.92Fe0.08O3 th...

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Main Authors:	Noor Baa`yah Ibrahim, N.F. Zulkifli, Lau, L.N., A.Z. Arsad, N. Yusop
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2019
Online Access:	http://journalarticle.ukm.my/13070/ http://journalarticle.ukm.my/13070/ http://journalarticle.ukm.my/13070/1/24%20N.B.%20Ibrahim.pdf

id	ukm-13070
recordtype	eprints
spelling	ukm-130702019-06-20T14:51:33Z http://journalarticle.ukm.my/13070/ Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films Noor Baa`yah Ibrahim, N.F. Zulkifli, Lau, L.N. A.Z. Arsad, N. Yusop, Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In1.92Fe0.08O3 thin films were prepared by a sol-gel method and followed by a spin coating technique. Different flow rates of hydrogen gas were applied during the annealing process. All samples showed high orientation along the (222) direction and exhibit a polycrystalline structure. Grain size increased as the flow rate increased due to the stronger reduction of H2. FTIR studies showed the existence of an O-H bond in the range of 3000 - 4000 cm-1 and it was caused by the flow of H2 gas during the annealing process. The resistivity of In1.92Fe0.08O3 thin films decreased and the carrier concentration increased with increasing hydrogen flow rates. This work has significance on the size-dependent properties and the chemical bonding in Fe doped In2O3 films. Penerbit Universiti Kebangsaan Malaysia 2019-01 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/13070/1/24%20N.B.%20Ibrahim.pdf Noor Baa`yah Ibrahim, and N.F. Zulkifli, and Lau, L.N. and A.Z. Arsad, and N. Yusop, (2019) Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films. Sains Malaysiana, 48 (1). pp. 209-216. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid48bil1_2019/KandunganJilid48Bil1_2019.html
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In1.92Fe0.08O3 thin films were prepared by a sol-gel method and followed by a spin coating technique. Different flow rates of hydrogen gas were applied during the annealing process. All samples showed high orientation along the (222) direction and exhibit a polycrystalline structure. Grain size increased as the flow rate increased due to the stronger reduction of H2. FTIR studies showed the existence of an O-H bond in the range of 3000 - 4000 cm-1 and it was caused by the flow of H2 gas during the annealing process. The resistivity of In1.92Fe0.08O3 thin films decreased and the carrier concentration increased with increasing hydrogen flow rates. This work has significance on the size-dependent properties and the chemical bonding in Fe doped In2O3 films.
format	Article
author	Noor Baa`yah Ibrahim, N.F. Zulkifli, Lau, L.N. A.Z. Arsad, N. Yusop,
spellingShingle	Noor Baa`yah Ibrahim, N.F. Zulkifli, Lau, L.N. A.Z. Arsad, N. Yusop, Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
author_facet	Noor Baa`yah Ibrahim, N.F. Zulkifli, Lau, L.N. A.Z. Arsad, N. Yusop,
author_sort	Noor Baa`yah Ibrahim,
title	Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_short	Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_full	Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_fullStr	Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_full_unstemmed	Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_sort	influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized fe doped in2o3 films
publisher	Penerbit Universiti Kebangsaan Malaysia
publishDate	2019
url	http://journalarticle.ukm.my/13070/ http://journalarticle.ukm.my/13070/ http://journalarticle.ukm.my/13070/1/24%20N.B.%20Ibrahim.pdf
first_indexed	2023-09-18T20:04:01Z
last_indexed	2023-09-18T20:04:01Z
_version_	1777407038040571904

Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films

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