Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films

Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In1.92Fe0.08O3 th...

Full description

Bibliographic Details
Main Authors: Noor Baa`yah Ibrahim, N.F. Zulkifli, Lau, L.N., A.Z. Arsad, N. Yusop
Format: Article
Language:English
Published: Penerbit Universiti Kebangsaan Malaysia 2019
Online Access:http://journalarticle.ukm.my/13070/
http://journalarticle.ukm.my/13070/
http://journalarticle.ukm.my/13070/1/24%20N.B.%20Ibrahim.pdf

Similar Items