Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)

Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation...

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Main Authors: Siti Kudnie Sahari, Nik Amni Fathi Nik Zaini Fathi, Azrul Azlan Hamzah, Norsuzailina Mohamed Sutan, Zaidi Embong, Suhana Mohamed Sultan, Muhammad Kashif, Marini Sawawi, Hasanah, Lilik, Rohana Sapawi, Kuryati Kipli, Abdul Rahman Kram, Nazreen Junaidi
Format: Article
Language:English
Published: Penerbit Universiti Kebangsaan Malaysia 2019
Online Access:http://journalarticle.ukm.my/13711/
http://journalarticle.ukm.my/13711/
http://journalarticle.ukm.my/13711/1/06%20Siti%20Kudnie%20Sahari.pdf
id ukm-13711
recordtype eprints
spelling ukm-137112019-11-29T08:58:33Z http://journalarticle.ukm.my/13711/ Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3) Siti Kudnie Sahari, Nik Amni Fathi Nik Zaini Fathi, Azrul Azlan Hamzah, Norsuzailina Mohamed Sutan, Zaidi Embong, Suhana Mohamed Sultan, Muhammad Kashif, Marini Sawawi, Hasanah, Lilik Rohana Sapawi, Kuryati Kipli, Abdul Rahman Kram, Nazreen Junaidi, The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600°C. Penerbit Universiti Kebangsaan Malaysia 2019-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/13711/1/06%20Siti%20Kudnie%20Sahari.pdf Siti Kudnie Sahari, and Nik Amni Fathi Nik Zaini Fathi, and Azrul Azlan Hamzah, and Norsuzailina Mohamed Sutan, and Zaidi Embong, and Suhana Mohamed Sultan, and Muhammad Kashif, and Marini Sawawi, and Hasanah, Lilik and Rohana Sapawi, and Kuryati Kipli, and Abdul Rahman Kram, and Nazreen Junaidi, (2019) Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3). Sains Malaysiana, 48 (6). pp. 1195-1199. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid48bil6_2019/KandunganJilid48Bil6_2019.html
repository_type Digital Repository
institution_category Local University
institution Universiti Kebangasaan Malaysia
building UKM Institutional Repository
collection Online Access
language English
description The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600°C.
format Article
author Siti Kudnie Sahari,
Nik Amni Fathi Nik Zaini Fathi,
Azrul Azlan Hamzah,
Norsuzailina Mohamed Sutan,
Zaidi Embong,
Suhana Mohamed Sultan,
Muhammad Kashif,
Marini Sawawi,
Hasanah, Lilik
Rohana Sapawi,
Kuryati Kipli,
Abdul Rahman Kram,
Nazreen Junaidi,
spellingShingle Siti Kudnie Sahari,
Nik Amni Fathi Nik Zaini Fathi,
Azrul Azlan Hamzah,
Norsuzailina Mohamed Sutan,
Zaidi Embong,
Suhana Mohamed Sultan,
Muhammad Kashif,
Marini Sawawi,
Hasanah, Lilik
Rohana Sapawi,
Kuryati Kipli,
Abdul Rahman Kram,
Nazreen Junaidi,
Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)
author_facet Siti Kudnie Sahari,
Nik Amni Fathi Nik Zaini Fathi,
Azrul Azlan Hamzah,
Norsuzailina Mohamed Sutan,
Zaidi Embong,
Suhana Mohamed Sultan,
Muhammad Kashif,
Marini Sawawi,
Hasanah, Lilik
Rohana Sapawi,
Kuryati Kipli,
Abdul Rahman Kram,
Nazreen Junaidi,
author_sort Siti Kudnie Sahari,
title Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)
title_short Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)
title_full Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)
title_fullStr Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)
title_full_unstemmed Effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (Ge) /aluminium oxide (Al2O3)
title_sort effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (ge) /aluminium oxide (al2o3)
publisher Penerbit Universiti Kebangsaan Malaysia
publishDate 2019
url http://journalarticle.ukm.my/13711/
http://journalarticle.ukm.my/13711/
http://journalarticle.ukm.my/13711/1/06%20Siti%20Kudnie%20Sahari.pdf
first_indexed 2023-09-18T20:05:28Z
last_indexed 2023-09-18T20:05:28Z
_version_ 1777407128563089408

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