Optimization of N-Channel trench power MOSFET using 2k factorial design method

The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2k factorial design method for achieving...

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Main Authors:	Nur Syakimah Ismail, Ibrahim Ahmad, Hafizah Husain
Format:	Article
Published:	Universiti Kebangsaan Malaysia 2009
Online Access:	http://journalarticle.ukm.my/24/ http://journalarticle.ukm.my/24/

id	ukm-24
recordtype	eprints
spelling	ukm-242011-11-25T07:11:19Z http://journalarticle.ukm.my/24/ Optimization of N-Channel trench power MOSFET using 2k factorial design method Nur Syakimah Ismail, Ibrahim Ahmad, Hafizah Husain, The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2k factorial design method for achieving specific on-resistance 0.1 mΩcm2 and blocking voltage higher than 30 V. ATHENA and ATLAS software from Silvaco Int. were used for fabrication simulation and device electrical characterisation. The results obtained were, the optimisation value for trench width was 1.25 μm, trench depth was 1.25 μm, epitaxial thickness was 4.75 μm and epitaxial resistivity was 0.32 Ωcm. The predictive value of breakdown voltage was 39.41 V and significant to factors trench depth, epitaxial thickness and epitaxial resistivity. The predictive value for on-resistance was 0.105 mΩcm2 with significant to factors trench depth, epitaxial thickness and epitaxial resistivity. In conclusion, 2k factorial design method is successfully utilised in optimizing n-channel trench power MOSFET. Universiti Kebangsaan Malaysia 2009-10 Article PeerReviewed Nur Syakimah Ismail, and Ibrahim Ahmad, and Hafizah Husain, (2009) Optimization of N-Channel trench power MOSFET using 2k factorial design method. Sains Malaysiana, 38 (5). pp. 693-698. ISSN 0126-6039 http://www.ukm.my/~jsm/contents.html
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
description	The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2k factorial design method for achieving specific on-resistance 0.1 mΩcm2 and blocking voltage higher than 30 V. ATHENA and ATLAS software from Silvaco Int. were used for fabrication simulation and device electrical characterisation. The results obtained were, the optimisation value for trench width was 1.25 μm, trench depth was 1.25 μm, epitaxial thickness was 4.75 μm and epitaxial resistivity was 0.32 Ωcm. The predictive value of breakdown voltage was 39.41 V and significant to factors trench depth, epitaxial thickness and epitaxial resistivity. The predictive value for on-resistance was 0.105 mΩcm2 with significant to factors trench depth, epitaxial thickness and epitaxial resistivity. In conclusion, 2k factorial design method is successfully utilised in optimizing n-channel trench power MOSFET.
format	Article
author	Nur Syakimah Ismail, Ibrahim Ahmad, Hafizah Husain,
spellingShingle	Nur Syakimah Ismail, Ibrahim Ahmad, Hafizah Husain, Optimization of N-Channel trench power MOSFET using 2k factorial design method
author_facet	Nur Syakimah Ismail, Ibrahim Ahmad, Hafizah Husain,
author_sort	Nur Syakimah Ismail,
title	Optimization of N-Channel trench power MOSFET using 2k factorial design method
title_short	Optimization of N-Channel trench power MOSFET using 2k factorial design method
title_full	Optimization of N-Channel trench power MOSFET using 2k factorial design method
title_fullStr	Optimization of N-Channel trench power MOSFET using 2k factorial design method
title_full_unstemmed	Optimization of N-Channel trench power MOSFET using 2k factorial design method
title_sort	optimization of n-channel trench power mosfet using 2k factorial design method
publisher	Universiti Kebangsaan Malaysia
publishDate	2009
url	http://journalarticle.ukm.my/24/ http://journalarticle.ukm.my/24/
first_indexed	2023-09-18T19:01:04Z
last_indexed	2023-09-18T19:01:04Z
_version_	1777403076711284736

Optimization of N-Channel trench power MOSFET using 2k factorial design method

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