Optimization of N-Channel trench power MOSFET using 2k factorial design method
The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2k factorial design method for achieving...
| Main Authors: | , , |
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| Format: | Article |
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Universiti Kebangsaan Malaysia
2009
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| Online Access: | http://journalarticle.ukm.my/24/ http://journalarticle.ukm.my/24/ |