Effect of plasma power and flow rate of silane gas on diameter of silicon nanowires grown by plasma enhanced chemical vapor deposition
Silicon nanowires (SiNWs) have been synthesized by plasma enhanced chemical vapor deposition (PECVD) at different power for generation of plasma and different flow rate of silane gas. Silane (10% SiH4 in Ar) gas with flow rate ranging between 6-15 standard cubic centimeter per minute(sccm) were empl...
Main Authors: | Habib Hamidinezhad, Yussof Wahab, Zulkafli Othaman, Imam Sumpono |
---|---|
Format: | Article |
Language: | English |
Published: |
Universiti Kebangsaan Malaysia
2011
|
Online Access: | http://journalarticle.ukm.my/2449/ http://journalarticle.ukm.my/2449/ http://journalarticle.ukm.my/2449/1/14_Habib_Hamidinezhad.pdf |
Similar Items
-
Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
by: Yussof Wahab,, et al.
Published: (2013) -
Review—Critical considerations of high quality graphene
synthesized by plasma-enhanced chemical vapor deposition for
electronic and energy storage devices
by: Mohd Abid, Mohd Asyadi Azam, et al.
Published: (2017) -
Graphene growth at low temperatures using RF-plasma
enhanced chemical vapour deposition
by: Aishah Khalid,, et al.
Published: (2017) -
Effect of surface pretreatments on the deposition of polycrystalline diamond on silicon nitride substrates using hot filament chemical vapor deposition method
by: Dayangku Noorfazidah, Awang Sh'ri
Published: (2009) -
Mendaratlah plasma hijau
by: M. Ariffin Siri
Published: (1977)