ICP-RIE dry etching using Cl2-based on GaN
In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl2/Ar and Cl2/H2 plasmas were investigated. Our results showed that inductively coupled plasma (ICP) etching of gallium nitride by using Cl2/Ar and Cl2/H2 were possible to meet the requirements (anisotropy, h...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia
2011
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| Online Access: | http://journalarticle.ukm.my/2454/ http://journalarticle.ukm.my/2454/ http://journalarticle.ukm.my/2454/1/18_Siti_Azlina.pdf |
| Summary: | In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl2/Ar and Cl2/H2 plasmas were
investigated. Our results showed that inductively coupled plasma (ICP) etching of gallium nitride by using Cl2/Ar and
Cl2/H2 were possible to meet the requirements (anisotropy, high etch rate and high selectivity). We have investigated
the etching rate dependency on the percentage of argon and hydrogen in the gas mixture and the DC voltage. Surface
morphology of the etched samples was checked by SEM and AFM. It was found that the etched surface was anisotropic
and the smoothness of the etched surface is comparable to that of polished wafer. As results, gas mixture using Cl2/Ar,
we obtained highest etching rates; 5000 Å/min and ~0.5 nm rms roughness for n-GaN and for p-GaN, the etching rates
was 3300 Å/min and ~0.7 nm for rms roughness. Meanwhile, for gas mixture using Cl2/H2, the etching was 1580 Å/min
for n-GaN and 950 Å/min for p-GaN. |
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