Effective mass of band edges in a (20)InAs-(6)Al0.1Ga0.9Sb superlattice

The curvature method and the f-sum rule are used to calculate the effective mass of electrons and holes at the Brillouin zone band edges of a (20)InAs(6)Al0.1Ga0.9Sb superlattice. The electronic and optical parameters used in the calculations for this type II semiconductor superlattice are derived f...

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Main Author: Geri Kibe AK. Gopir
Format: Article
Published: Universiti Kebangsaan Malaysia 1999
Online Access:http://journalarticle.ukm.my/3773/
http://journalarticle.ukm.my/3773/
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spelling ukm-37732012-05-02T09:42:35Z http://journalarticle.ukm.my/3773/ Effective mass of band edges in a (20)InAs-(6)Al0.1Ga0.9Sb superlattice Geri Kibe AK. Gopir, The curvature method and the f-sum rule are used to calculate the effective mass of electrons and holes at the Brillouin zone band edges of a (20)InAs(6)Al0.1Ga0.9Sb superlattice. The electronic and optical parameters used in the calculations for this type II semiconductor superlattice are derived from the relativistic empirical pseudopotential method. In this superlattice system the calculated effective masses for the carriers are anisotropic and differ from those of the various reported semiconductor heterostructures. These results indicate that the carrier effective masses are dependent on certain factors such as polarisation, constituent layer composition and layer length. The calculated effective masses of electrons in this III- V semiconductor heterostructure are found to be larger than those in Hg1-xCdxTe alloys with similar band gaps corresponding to cutoff wavelengths near 10 μm. This makes the InAs-AlGaSb superlattice system a potential competitor to the present standard material of HgCdTe for far infrared applications. Universiti Kebangsaan Malaysia 1999 Article PeerReviewed Geri Kibe AK. Gopir, (1999) Effective mass of band edges in a (20)InAs-(6)Al0.1Ga0.9Sb superlattice. Sains Malaysiana, 28 . pp. 127-139. ISSN 0126-6039 http://www.ukm.my/jsm/english_journals/vol28_1999/vol28_99page127-139.html
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description The curvature method and the f-sum rule are used to calculate the effective mass of electrons and holes at the Brillouin zone band edges of a (20)InAs(6)Al0.1Ga0.9Sb superlattice. The electronic and optical parameters used in the calculations for this type II semiconductor superlattice are derived from the relativistic empirical pseudopotential method. In this superlattice system the calculated effective masses for the carriers are anisotropic and differ from those of the various reported semiconductor heterostructures. These results indicate that the carrier effective masses are dependent on certain factors such as polarisation, constituent layer composition and layer length. The calculated effective masses of electrons in this III- V semiconductor heterostructure are found to be larger than those in Hg1-xCdxTe alloys with similar band gaps corresponding to cutoff wavelengths near 10 μm. This makes the InAs-AlGaSb superlattice system a potential competitor to the present standard material of HgCdTe for far infrared applications.
format Article
author Geri Kibe AK. Gopir,
spellingShingle Geri Kibe AK. Gopir,
Effective mass of band edges in a (20)InAs-(6)Al0.1Ga0.9Sb superlattice
author_facet Geri Kibe AK. Gopir,
author_sort Geri Kibe AK. Gopir,
title Effective mass of band edges in a (20)InAs-(6)Al0.1Ga0.9Sb superlattice
title_short Effective mass of band edges in a (20)InAs-(6)Al0.1Ga0.9Sb superlattice
title_full Effective mass of band edges in a (20)InAs-(6)Al0.1Ga0.9Sb superlattice
title_fullStr Effective mass of band edges in a (20)InAs-(6)Al0.1Ga0.9Sb superlattice
title_full_unstemmed Effective mass of band edges in a (20)InAs-(6)Al0.1Ga0.9Sb superlattice
title_sort effective mass of band edges in a (20)inas-(6)al0.1ga0.9sb superlattice
publisher Universiti Kebangsaan Malaysia
publishDate 1999
url http://journalarticle.ukm.my/3773/
http://journalarticle.ukm.my/3773/
first_indexed 2023-09-18T19:39:42Z
last_indexed 2023-09-18T19:39:42Z
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