Modelling of stark effect in InAs-AlGaSb multi-quantum wells
The Stark effectina (20)InAs(6)As-(6)Al0.1Ga0.9 Sb multi-quantum well structure was theoretically modelled using the electric-field-perturbed formulation of the empirical pseudopotential method. An external electric field of up to 4.0 x 1()5 V cm-! was applied along the axis of the multi-quantum we...
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Universiti Kebangsaan Malaysia
2000
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| Online Access: | http://journalarticle.ukm.my/3789/ http://journalarticle.ukm.my/3789/ |
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ukm-37892012-05-02T10:41:16Z http://journalarticle.ukm.my/3789/ Modelling of stark effect in InAs-AlGaSb multi-quantum wells Geri Kibe AK Gopir, The Stark effectina (20)InAs(6)As-(6)Al0.1Ga0.9 Sb multi-quantum well structure was theoretically modelled using the electric-field-perturbed formulation of the empirical pseudopotential method. An external electric field of up to 4.0 x 1()5 V cm-! was applied along the axis of the multi-quantum well structure and its effect on the energy level, localisation and optical transition of the lowest electron and hole states were investigated. The perturbation produced Wannier-Stark localisation and a red Stark shift for this type II semiconductor heterostructure. The calculated optical gap decreased down to 10 meV with the corresponding principal momentum matrix elements, along x polarisation, remain basically constant at a.u.(atomic unit). This property makes the III-V semiconductor heterostructure potentially attractive for use as a field-tunable device in the infrared spectra of 10-100µm. Universiti Kebangsaan Malaysia 2000 Article PeerReviewed Geri Kibe AK Gopir, (2000) Modelling of stark effect in InAs-AlGaSb multi-quantum wells. Sains Malaysiana, 29 . pp. 145-161. ISSN 0126-6039 http://www.ukm.my/jsm/english_journals/vol29_2000/vol29_00page145-161.html |
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Digital Repository |
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Local University |
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Universiti Kebangasaan Malaysia |
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UKM Institutional Repository |
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Online Access |
| description |
The Stark effectina (20)InAs(6)As-(6)Al0.1Ga0.9 Sb multi-quantum well structure was theoretically modelled using the electric-field-perturbed formulation of the empirical pseudopotential method. An external electric field of up to 4.0 x 1()5 V cm-! was applied along the axis of the multi-quantum well structure and its effect on the energy level, localisation and optical transition of the lowest electron and hole states were investigated. The perturbation produced Wannier-Stark localisation and a red Stark shift for this type II semiconductor heterostructure. The calculated optical gap decreased down to 10 meV with the corresponding principal momentum matrix elements, along x polarisation, remain basically constant at a.u.(atomic unit). This property makes the III-V semiconductor heterostructure potentially attractive for use as a field-tunable device in the infrared spectra of 10-100µm. |
| format |
Article |
| author |
Geri Kibe AK Gopir, |
| spellingShingle |
Geri Kibe AK Gopir, Modelling of stark effect in InAs-AlGaSb multi-quantum wells |
| author_facet |
Geri Kibe AK Gopir, |
| author_sort |
Geri Kibe AK Gopir, |
| title |
Modelling of stark effect in InAs-AlGaSb multi-quantum wells |
| title_short |
Modelling of stark effect in InAs-AlGaSb multi-quantum wells |
| title_full |
Modelling of stark effect in InAs-AlGaSb multi-quantum wells |
| title_fullStr |
Modelling of stark effect in InAs-AlGaSb multi-quantum wells |
| title_full_unstemmed |
Modelling of stark effect in InAs-AlGaSb multi-quantum wells |
| title_sort |
modelling of stark effect in inas-algasb multi-quantum wells |
| publisher |
Universiti Kebangsaan Malaysia |
| publishDate |
2000 |
| url |
http://journalarticle.ukm.my/3789/ http://journalarticle.ukm.my/3789/ |
| first_indexed |
2023-09-18T19:39:47Z |
| last_indexed |
2023-09-18T19:39:47Z |
| _version_ |
1777405513108029440 |