Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors

Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dep...

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Main Authors:	Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2013
Online Access:	http://journalarticle.ukm.my/5905/ http://journalarticle.ukm.my/5905/ http://journalarticle.ukm.my/5905/1/13%2520Dmitri%2520Osintsev.pdf

id	ukm-5905
recordtype	eprints
spelling	ukm-59052016-12-14T06:39:49Z http://journalarticle.ukm.my/5905/ Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr, Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dependent strength of the spin-orbit interaction in the semiconductor region. We investigated the properties of SpinFETs for various parameters - the band mismatch, the barrier height between the contacts and the channel and the strength of the spin-orbit coupling, for various temperatures. We demonstrated that the creation of Schottky barriers between the channel and the contacts guarantees a pronounced modulation of the magnetoresistance sufficient to open a possibility to operate SpinFETs at room temperature. We also demonstrated that silicon fins with [100] orientation exhibit a stronger dependence on the value of the spin-orbit interaction and are thus preferable for practical realization of silicon-based SpinFETs. Universiti Kebangsaan Malaysia 2013-02 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5905/1/13%2520Dmitri%2520Osintsev.pdf Dmitri Osintsev, and Viktor Sverdlov, and Alexander Makarov, and Siegfried Selberherr, (2013) Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors. Sains Malaysiana, 42 (2). pp. 205-211. ISSN 0126-6039 http://www.ukm.my/jsm/
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dependent strength of the spin-orbit interaction in the semiconductor region. We investigated the properties of SpinFETs for various parameters - the band mismatch, the barrier height between the contacts and the channel and the strength of the spin-orbit coupling, for various temperatures. We demonstrated that the creation of Schottky barriers between the channel and the contacts guarantees a pronounced modulation of the magnetoresistance sufficient to open a possibility to operate SpinFETs at room temperature. We also demonstrated that silicon fins with [100] orientation exhibit a stronger dependence on the value of the spin-orbit interaction and are thus preferable for practical realization of silicon-based SpinFETs.
format	Article
author	Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr,
spellingShingle	Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr, Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors
author_facet	Dmitri Osintsev, Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr,
author_sort	Dmitri Osintsev,
title	Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors
title_short	Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors
title_full	Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors
title_fullStr	Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors
title_full_unstemmed	Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors
title_sort	current and conductance modulation at elevated temperature in silicon and inas-based spin field-effect transistors
publisher	Universiti Kebangsaan Malaysia
publishDate	2013
url	http://journalarticle.ukm.my/5905/ http://journalarticle.ukm.my/5905/ http://journalarticle.ukm.my/5905/1/13%2520Dmitri%2520Osintsev.pdf
first_indexed	2023-09-18T19:45:29Z
last_indexed	2023-09-18T19:45:29Z
_version_	1777405871301591040

Current and conductance modulation at elevated temperature in silicon and InAs-based spin field-effect transistors

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